H2S gas sensing properties of nanocrystalline Cu-doped ZnO thin films prepared by advanced spray pyrolysis

P. S. Shewale; V. B. Patil; S. W. Shin; J. H. Kim; M. D. Uplane

doi:10.1016/j.snb.2013.05.073

H₂S gas sensing properties of nanocrystalline Cu-doped ZnO thin films prepared by advanced spray pyrolysis

P. S. Shewale
, V. B. Patil
, S. W. Shin
, J. H. Kim
, M. D. Uplane

Research output: Contribution to journal › Article › peer-review

107 Scopus citations

Abstract

The ZnO-based thin films doped with 1-4 wt% Cu were deposited on the glass substrates using the advanced spray pyrolysis technique. All films are deposited at 473 K. The crystallinity and morphology of the films were characterized by XRD, TEM and FE-SEM respectively. The structural analyses of the films indicate that they are polycrystalline and have a hexagonal wurtzite structure; however Cu doping enhances the preferential orientation along the [0 0 2]. The energy dispersive X-ray spectroscopic analysis (EDX) confirmed an enhancement in the amount of Cu in the film with increase in the copper concentration in the starting solution. The sensor response was estimated by the change in the electrical conductance of the film in the absence and presence of H₂S gas. The sensor response and selectivity in relation to, operation temperature, Cu doping concentration and the gas concentration has been systematically studied. A significant response (∼0.38) towards 20 ppm H₂S at 523 K operating temperature is observed for the 4 wt% Cu-doped ZnO. The Pd-sensitized 4 wt% Cu doped ZnO film exhibits improved sensing characteristics with good stability.

Original language	English (US)
Pages (from-to)	226-234
Number of pages	9
Journal	Sensors and Actuators, B: Chemical
Volume	186
DOIs	https://doi.org/10.1016/j.snb.2013.05.073
State	Published - 2013
Externally published	Yes

Bibliographical note

Funding Information:
Authors are very much thankful to UGC for the financial support through major research project [ 33-399/2007 (SR)]. One of the authors P.S. Shewale is grateful to University Grants Commission (UGC), New Delhi, India for awarding the “Research Fellowship in Science for Meritorious Students to Promote Quality Research in Universities” under the UGC-NON-SAP programme. Authors are also thankful to the Department of Science and Technology (DST), Government of India, New Delhi for the financial support under DST-PURSE 360 scheme. Finally, the authors are grateful to National Chemical laboratory, Pune, INDIA for making available an energy dispersive X-ray spectrometer (EDX) facility.

Keywords

Advanced spray pyrolysis
Cu doping
HS sensing
Thin films
ZnO

Publisher link

10.1016/j.snb.2013.05.073

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@article{4a30f00792e94476b023a7244e9bb24b,

title = "H2S gas sensing properties of nanocrystalline Cu-doped ZnO thin films prepared by advanced spray pyrolysis",

abstract = "The ZnO-based thin films doped with 1-4 wt\% Cu were deposited on the glass substrates using the advanced spray pyrolysis technique. All films are deposited at 473 K. The crystallinity and morphology of the films were characterized by XRD, TEM and FE-SEM respectively. The structural analyses of the films indicate that they are polycrystalline and have a hexagonal wurtzite structure; however Cu doping enhances the preferential orientation along the [0 0 2]. The energy dispersive X-ray spectroscopic analysis (EDX) confirmed an enhancement in the amount of Cu in the film with increase in the copper concentration in the starting solution. The sensor response was estimated by the change in the electrical conductance of the film in the absence and presence of H2S gas. The sensor response and selectivity in relation to, operation temperature, Cu doping concentration and the gas concentration has been systematically studied. A significant response (∼0.38) towards 20 ppm H2S at 523 K operating temperature is observed for the 4 wt\% Cu-doped ZnO. The Pd-sensitized 4 wt\% Cu doped ZnO film exhibits improved sensing characteristics with good stability.",

keywords = "Advanced spray pyrolysis, Cu doping, HS sensing, Thin films, ZnO",

author = "Shewale, \{P. S.\} and Patil, \{V. B.\} and Shin, \{S. W.\} and Kim, \{J. H.\} and Uplane, \{M. D.\}",

note = "Funding Information: Authors are very much thankful to UGC for the financial support through major research project [ 33-399/2007 (SR)]. One of the authors P.S. Shewale is grateful to University Grants Commission (UGC), New Delhi, India for awarding the {\textquotedblleft}Research Fellowship in Science for Meritorious Students to Promote Quality Research in Universities{\textquotedblright} under the UGC-NON-SAP programme. Authors are also thankful to the Department of Science and Technology (DST), Government of India, New Delhi for the financial support under DST-PURSE 360 scheme. Finally, the authors are grateful to National Chemical laboratory, Pune, INDIA for making available an energy dispersive X-ray spectrometer (EDX) facility. ",

year = "2013",

doi = "10.1016/j.snb.2013.05.073",

language = "English (US)",

volume = "186",

pages = "226--234",

journal = "Sensors and Actuators, B: Chemical",

issn = "0925-4005",

publisher = "Elsevier B.V.",

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T1 - H2S gas sensing properties of nanocrystalline Cu-doped ZnO thin films prepared by advanced spray pyrolysis

AU - Shewale, P. S.

AU - Patil, V. B.

AU - Shin, S. W.

AU - Kim, J. H.

AU - Uplane, M. D.

N1 - Funding Information: Authors are very much thankful to UGC for the financial support through major research project [ 33-399/2007 (SR)]. One of the authors P.S. Shewale is grateful to University Grants Commission (UGC), New Delhi, India for awarding the “Research Fellowship in Science for Meritorious Students to Promote Quality Research in Universities” under the UGC-NON-SAP programme. Authors are also thankful to the Department of Science and Technology (DST), Government of India, New Delhi for the financial support under DST-PURSE 360 scheme. Finally, the authors are grateful to National Chemical laboratory, Pune, INDIA for making available an energy dispersive X-ray spectrometer (EDX) facility.

PY - 2013

Y1 - 2013

N2 - The ZnO-based thin films doped with 1-4 wt% Cu were deposited on the glass substrates using the advanced spray pyrolysis technique. All films are deposited at 473 K. The crystallinity and morphology of the films were characterized by XRD, TEM and FE-SEM respectively. The structural analyses of the films indicate that they are polycrystalline and have a hexagonal wurtzite structure; however Cu doping enhances the preferential orientation along the [0 0 2]. The energy dispersive X-ray spectroscopic analysis (EDX) confirmed an enhancement in the amount of Cu in the film with increase in the copper concentration in the starting solution. The sensor response was estimated by the change in the electrical conductance of the film in the absence and presence of H2S gas. The sensor response and selectivity in relation to, operation temperature, Cu doping concentration and the gas concentration has been systematically studied. A significant response (∼0.38) towards 20 ppm H2S at 523 K operating temperature is observed for the 4 wt% Cu-doped ZnO. The Pd-sensitized 4 wt% Cu doped ZnO film exhibits improved sensing characteristics with good stability.

AB - The ZnO-based thin films doped with 1-4 wt% Cu were deposited on the glass substrates using the advanced spray pyrolysis technique. All films are deposited at 473 K. The crystallinity and morphology of the films were characterized by XRD, TEM and FE-SEM respectively. The structural analyses of the films indicate that they are polycrystalline and have a hexagonal wurtzite structure; however Cu doping enhances the preferential orientation along the [0 0 2]. The energy dispersive X-ray spectroscopic analysis (EDX) confirmed an enhancement in the amount of Cu in the film with increase in the copper concentration in the starting solution. The sensor response was estimated by the change in the electrical conductance of the film in the absence and presence of H2S gas. The sensor response and selectivity in relation to, operation temperature, Cu doping concentration and the gas concentration has been systematically studied. A significant response (∼0.38) towards 20 ppm H2S at 523 K operating temperature is observed for the 4 wt% Cu-doped ZnO. The Pd-sensitized 4 wt% Cu doped ZnO film exhibits improved sensing characteristics with good stability.

KW - Advanced spray pyrolysis

KW - Cu doping

KW - HS sensing

KW - Thin films

KW - ZnO

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