How to report and benchmark emerging field-effect transistors

Zhihui Cheng, Chin Sheng Pang, Peiqi Wang, Son T. Le, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max C. Lemme, Lian Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven J. Koester, Eric Pop, Aaron D. Franklin, Curt A. Richter

Research output: Contribution to journalArticlepeer-review

55 Scopus citations

Abstract

The use of organic, oxide and low-dimensional materials in field-effect transistors has now been studied for decades. However, properly reporting and comparing device performance remains challenging due to the interdependency of multiple device parameters. The interdisciplinarity of this research community has also led to a lack of consistent reporting and benchmarking guidelines. Here we propose guidelines for reporting and benchmarking key field-effect transistor parameters and performance metrics. We provide an example of this reporting and benchmarking process using a two-dimensional semiconductor field-effect transistor. Our guidelines should help promote an improved approach for assessing device performance in emerging field-effect transistors, helping the field to progress in a more consistent and meaningful way.

Original languageEnglish (US)
Pages (from-to)416-423
Number of pages8
JournalNature Electronics
Volume5
Issue number7
DOIs
StatePublished - Jul 2022
Externally publishedYes

Bibliographical note

Funding Information:
We acknowledge H. Zhang and A. Davydov from the National Institute of Standards and Technology for their help with the TEM images of the oxide in Fig. 2. We acknowledge G. Li and L. Cao from North Carolina State University for providing the chemical-vapour-deposited MoS2 film. This work is supported by NEWLIMITS, a centre in nCORE, a Semiconductor Research Corporation (SRC) programme sponsored by NIST through award no. 70NANB17H041. A.D.F. acknowledges support from the National Science Foundation under grant no. ECCS 1915814. M.C.L. acknowledges funding from the European Union’s Horizon 2020 research and innovation programme under grant agreements nos. 881603 (Graphene Flagship), 952792 (2D-EPL) and 829035 (QUEFORMAL), as well as the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) through grants nos. LE 2440/7-1 and LE 2440/8-1. Furthermore, support by the Bundesministerium für Bildung und Forschung (BMBF, German Ministry of Education and Research) through grants nos. 03XP0210 (GIMMIK) and 03ZU1106 (NeuroSys) is acknowledged. L.-M.P. acknowledges the National Science Foundation of China under grant no. 61888102. S.J.K. acknowledges support from the NSF through award no. DMR-1921629. Fabrication and measurements were partially performed at the NIST Center for Nanoscale Science and Technology and at Duke Shared Manufacturing and Instrument Facility (SMIF). Certain commercial equipment, instruments, or materials are identified in this paper to specify the experimental procedure adequately. Such identifications are not intended to imply recommendation or endorsement by the National Institute of Standards and Technology (NIST), nor is it intended to imply that the materials or equipment identified are necessarily the best available for the purpose.

Funding Information:
We acknowledge H. Zhang and A. Davydov from the National Institute of Standards and Technology for their help with the TEM images of the oxide in Fig. . We acknowledge G. Li and L. Cao from North Carolina State University for providing the chemical-vapour-deposited MoS film. This work is supported by NEWLIMITS, a centre in nCORE, a Semiconductor Research Corporation (SRC) programme sponsored by NIST through award no. 70NANB17H041. A.D.F. acknowledges support from the National Science Foundation under grant no. ECCS 1915814. M.C.L. acknowledges funding from the European Union’s Horizon 2020 research and innovation programme under grant agreements nos. 881603 (Graphene Flagship), 952792 (2D-EPL) and 829035 (QUEFORMAL), as well as the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) through grants nos. LE 2440/7-1 and LE 2440/8-1. Furthermore, support by the Bundesministerium für Bildung und Forschung (BMBF, German Ministry of Education and Research) through grants nos. 03XP0210 (GIMMIK) and 03ZU1106 (NeuroSys) is acknowledged. L.-M.P. acknowledges the National Science Foundation of China under grant no. 61888102. S.J.K. acknowledges support from the NSF through award no. DMR-1921629. Fabrication and measurements were partially performed at the NIST Center for Nanoscale Science and Technology and at Duke Shared Manufacturing and Instrument Facility (SMIF). Certain commercial equipment, instruments, or materials are identified in this paper to specify the experimental procedure adequately. Such identifications are not intended to imply recommendation or endorsement by the National Institute of Standards and Technology (NIST), nor is it intended to imply that the materials or equipment identified are necessarily the best available for the purpose. 2

Publisher Copyright:
© 2022, Springer Nature Limited.

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