We have used a scanning tunneling microscope to image step edges as well as small Si islands on the Si(001)-2 X1 reconstructed surface at temperatures up to 700 K. We count the changes in the step edge configuration and extract activation energies for the dominant processes. We also observe fluctuations in Si island size at rates that are higher than those we observe on step edges. To aid visualization of the dynamics, we display consecutive images of fluctuating islands and step edges as movies.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|State||Published - May 1995|
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