Hot scanning tunneling microscope study of B type step edges and small silicon islands on Si(001)

Chris Pearson, Michael Krueger, Robert Curtis, Brian Borovsky, Xin Shi, Eric Ganz

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

We have used a scanning tunneling microscope to image step edges as well as small Si islands on the Si(001)-2 X1 reconstructed surface at temperatures up to 700 K. We count the changes in the step edge configuration and extract activation energies for the dominant processes. We also observe fluctuations in Si island size at rates that are higher than those we observe on step edges. To aid visualization of the dynamics, we display consecutive images of fluctuating islands and step edges as movies.

Original languageEnglish (US)
Pages (from-to)1506-1510
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume13
Issue number3
DOIs
StatePublished - May 1995

Bibliographical note

Copyright:
Copyright 2016 Elsevier B.V., All rights reserved.

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