Hopping transport in SrTiO3 / N d1-xTiO3 / SrTiO3 heterostructures

Laxman Raju Thoutam, Jin Yue, Peng Xu, Bharat Jalan

Research output: Contribution to journalArticle

Abstract

Electronic transport near the insulator-metal transition is investigated in the molecular beam epitaxy-grown SrTiO3/Nd1-xTiO3/SrTiO3 heterostructures using temperature dependent magnetotransport measurements. It was found that Nd vacancies introduce localized electronic states resulting in variable range hopping transport at low temperatures. At a fixed Nd-vacancy concentration, a crossover from Mott to Efros-Shklovskii variable range hopping transport was observed with decreasing temperature. With increasing disorder, a sign reversal of magnetoresistance from positive to negative was observed revealing interplay between intra-state interaction and the energy dependence of the localization length. These findings highlight the important role of stoichiometry when exploring intrinsic effects using heterostructure and interfaces in addition to offering broad opportunities to tailor low temperature transport using nonstoichiometry defects.

Original languageEnglish (US)
Article number065006
JournalPhysical Review Materials
Volume3
Issue number6
DOIs
StatePublished - Jun 27 2019

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Heterojunctions
electronics
Vacancies
stoichiometry
crossovers
molecular beam epitaxy
transition metals
insulators
disorders
Galvanomagnetic effects
Temperature
Metal insulator transition
temperature
defects
Electronic states
Magnetoresistance
Molecular beam epitaxy
Stoichiometry
interactions
Defects

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Reporting period for MRSEC

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Hopping transport in SrTiO3 / N d1-xTiO3 / SrTiO3 heterostructures. / Thoutam, Laxman Raju; Yue, Jin; Xu, Peng; Jalan, Bharat.

In: Physical Review Materials, Vol. 3, No. 6, 065006, 27.06.2019.

Research output: Contribution to journalArticle

Thoutam, Laxman Raju ; Yue, Jin ; Xu, Peng ; Jalan, Bharat. / Hopping transport in SrTiO3 / N d1-xTiO3 / SrTiO3 heterostructures. In: Physical Review Materials. 2019 ; Vol. 3, No. 6.
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