Abstract
Electronic transport near the insulator-metal transition is investigated in the molecular beam epitaxy-grown SrTiO3/Nd1-xTiO3/SrTiO3 heterostructures using temperature dependent magnetotransport measurements. It was found that Nd vacancies introduce localized electronic states resulting in variable range hopping transport at low temperatures. At a fixed Nd-vacancy concentration, a crossover from Mott to Efros-Shklovskii variable range hopping transport was observed with decreasing temperature. With increasing disorder, a sign reversal of magnetoresistance from positive to negative was observed revealing interplay between intra-state interaction and the energy dependence of the localization length. These findings highlight the important role of stoichiometry when exploring intrinsic effects using heterostructure and interfaces in addition to offering broad opportunities to tailor low temperature transport using nonstoichiometry defects.
| Original language | English (US) |
|---|---|
| Article number | 065006 |
| Journal | Physical Review Materials |
| Volume | 3 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jun 27 2019 |
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Hopping transport in SrTiO3 / N d1-xTiO3 / SrTiO3 heterostructures. / Thoutam, Laxman Raju; Yue, Jin; Xu, Peng; Jalan, Bharat.
In: Physical Review Materials, Vol. 3, No. 6, 065006, 27.06.2019.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Hopping transport in SrTiO3 / N d1-xTiO3 / SrTiO3 heterostructures
AU - Thoutam, Laxman Raju
AU - Yue, Jin
AU - Xu, Peng
AU - Jalan, Bharat
PY - 2019/6/27
Y1 - 2019/6/27
N2 - Electronic transport near the insulator-metal transition is investigated in the molecular beam epitaxy-grown SrTiO3/Nd1-xTiO3/SrTiO3 heterostructures using temperature dependent magnetotransport measurements. It was found that Nd vacancies introduce localized electronic states resulting in variable range hopping transport at low temperatures. At a fixed Nd-vacancy concentration, a crossover from Mott to Efros-Shklovskii variable range hopping transport was observed with decreasing temperature. With increasing disorder, a sign reversal of magnetoresistance from positive to negative was observed revealing interplay between intra-state interaction and the energy dependence of the localization length. These findings highlight the important role of stoichiometry when exploring intrinsic effects using heterostructure and interfaces in addition to offering broad opportunities to tailor low temperature transport using nonstoichiometry defects.
AB - Electronic transport near the insulator-metal transition is investigated in the molecular beam epitaxy-grown SrTiO3/Nd1-xTiO3/SrTiO3 heterostructures using temperature dependent magnetotransport measurements. It was found that Nd vacancies introduce localized electronic states resulting in variable range hopping transport at low temperatures. At a fixed Nd-vacancy concentration, a crossover from Mott to Efros-Shklovskii variable range hopping transport was observed with decreasing temperature. With increasing disorder, a sign reversal of magnetoresistance from positive to negative was observed revealing interplay between intra-state interaction and the energy dependence of the localization length. These findings highlight the important role of stoichiometry when exploring intrinsic effects using heterostructure and interfaces in addition to offering broad opportunities to tailor low temperature transport using nonstoichiometry defects.
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U2 - 10.1103/PhysRevMaterials.3.065006
DO - 10.1103/PhysRevMaterials.3.065006
M3 - Article
VL - 3
JO - Physical Review Materials
JF - Physical Review Materials
SN - 2475-9953
IS - 6
M1 - 065006
ER -