Hopping transport in SrTiO3 / N d1-xTiO3 / SrTiO3 heterostructures

Laxman Raju Thoutam; Jin Yue; Peng Xu; Bharat Jalan

doi:10.1103/PhysRevMaterials.3.065006

Hopping transport in SrTiO₃ / N d1-xTiO₃ / SrTiO₃ heterostructures

Laxman Raju Thoutam, Jin Yue, Peng Xu, Bharat Jalan

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Electronic transport near the insulator-metal transition is investigated in the molecular beam epitaxy-grown SrTiO3/Nd1-xTiO3/SrTiO3 heterostructures using temperature dependent magnetotransport measurements. It was found that Nd vacancies introduce localized electronic states resulting in variable range hopping transport at low temperatures. At a fixed Nd-vacancy concentration, a crossover from Mott to Efros-Shklovskii variable range hopping transport was observed with decreasing temperature. With increasing disorder, a sign reversal of magnetoresistance from positive to negative was observed revealing interplay between intra-state interaction and the energy dependence of the localization length. These findings highlight the important role of stoichiometry when exploring intrinsic effects using heterostructure and interfaces in addition to offering broad opportunities to tailor low temperature transport using nonstoichiometry defects.

Original language	English (US)
Article number	065006
Journal	Physical Review Materials
Volume	3
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevMaterials.3.065006
State	Published - Jun 27 2019

Bibliographical note

Funding Information:
We thank B. Shklovskii, and Y. Ayino for valuable discussions. This work was primarily funded by the U.S. Department of Energy (DOE) through the University of Minnesota Center for Quantum Materials, under Grant No. DE-SC-0016371. J.Y. acknowledges partial support through the Young Investigator Program of the Air Force Office of Scientific Research (AFOSR) through Grant No. FA9550-16-1-0205. Parts of this work were carried out using the Dynacool instrument that is funded by the University of Minnesota National Science Foundation (NSF) MRSEC.

Funding Information:
We thank B. Shklovskii, and Y. Ayino for valuable discussions. This work was primarily funded by the U.S. Department of Energy (DOE) through the University of Minnesota Center for Quantum Materials, under Grant No. DE-SC-0016371. J.Y. acknowledges partial support through the Young Investigator Program of the Air Force Office of Scientific Research (AFOSR) through Grant No. FA9550-16-1-0205. Parts of this work were carried out using the Dynacool instrument that is funded by the University of Minnesota National Science Foundation (NSF) MRSEC.

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© 2019 American Physical Society.

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abstract = "Electronic transport near the insulator-metal transition is investigated in the molecular beam epitaxy-grown SrTiO3/Nd1-xTiO3/SrTiO3 heterostructures using temperature dependent magnetotransport measurements. It was found that Nd vacancies introduce localized electronic states resulting in variable range hopping transport at low temperatures. At a fixed Nd-vacancy concentration, a crossover from Mott to Efros-Shklovskii variable range hopping transport was observed with decreasing temperature. With increasing disorder, a sign reversal of magnetoresistance from positive to negative was observed revealing interplay between intra-state interaction and the energy dependence of the localization length. These findings highlight the important role of stoichiometry when exploring intrinsic effects using heterostructure and interfaces in addition to offering broad opportunities to tailor low temperature transport using nonstoichiometry defects.",

author = "Thoutam, {Laxman Raju} and Jin Yue and Peng Xu and Bharat Jalan",

note = "Funding Information: We thank B. Shklovskii, and Y. Ayino for valuable discussions. This work was primarily funded by the U.S. Department of Energy (DOE) through the University of Minnesota Center for Quantum Materials, under Grant No. DE-SC-0016371. J.Y. acknowledges partial support through the Young Investigator Program of the Air Force Office of Scientific Research (AFOSR) through Grant No. FA9550-16-1-0205. Parts of this work were carried out using the Dynacool instrument that is funded by the University of Minnesota National Science Foundation (NSF) MRSEC. Funding Information: We thank B. Shklovskii, and Y. Ayino for valuable discussions. This work was primarily funded by the U.S. Department of Energy (DOE) through the University of Minnesota Center for Quantum Materials, under Grant No. DE-SC-0016371. J.Y. acknowledges partial support through the Young Investigator Program of the Air Force Office of Scientific Research (AFOSR) through Grant No. FA9550-16-1-0205. Parts of this work were carried out using the Dynacool instrument that is funded by the University of Minnesota National Science Foundation (NSF) MRSEC. Publisher Copyright: {\textcopyright} 2019 American Physical Society.",

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N2 - Electronic transport near the insulator-metal transition is investigated in the molecular beam epitaxy-grown SrTiO3/Nd1-xTiO3/SrTiO3 heterostructures using temperature dependent magnetotransport measurements. It was found that Nd vacancies introduce localized electronic states resulting in variable range hopping transport at low temperatures. At a fixed Nd-vacancy concentration, a crossover from Mott to Efros-Shklovskii variable range hopping transport was observed with decreasing temperature. With increasing disorder, a sign reversal of magnetoresistance from positive to negative was observed revealing interplay between intra-state interaction and the energy dependence of the localization length. These findings highlight the important role of stoichiometry when exploring intrinsic effects using heterostructure and interfaces in addition to offering broad opportunities to tailor low temperature transport using nonstoichiometry defects.

AB - Electronic transport near the insulator-metal transition is investigated in the molecular beam epitaxy-grown SrTiO3/Nd1-xTiO3/SrTiO3 heterostructures using temperature dependent magnetotransport measurements. It was found that Nd vacancies introduce localized electronic states resulting in variable range hopping transport at low temperatures. At a fixed Nd-vacancy concentration, a crossover from Mott to Efros-Shklovskii variable range hopping transport was observed with decreasing temperature. With increasing disorder, a sign reversal of magnetoresistance from positive to negative was observed revealing interplay between intra-state interaction and the energy dependence of the localization length. These findings highlight the important role of stoichiometry when exploring intrinsic effects using heterostructure and interfaces in addition to offering broad opportunities to tailor low temperature transport using nonstoichiometry defects.

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Hopping transport in SrTiO₃ / N d1-xTiO₃ / SrTiO₃ heterostructures

Abstract

Bibliographical note

How much support was provided by MRSEC?

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MRSEC IRG-1: Electrostatic Control of Materials

MRSEC Program DMR-1420013

Cite this

Hopping transport in SrTiO3 / N d1-xTiO3 / SrTiO3 heterostructures

Abstract

Bibliographical note

How much support was provided by MRSEC?

Publisher link

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Other files and links

Fingerprint

Projects

MRSEC IRG-1: Electrostatic Control of Materials

MRSEC Program DMR-1420013

Cite this

Hopping transport in SrTiO₃ / N d1-xTiO₃ / SrTiO₃ heterostructures