Abstract
We consider hopping transport in a dilutely doped sheet of Si donors in GaAs. Samples are constructed as multiple layers, spaced significantly farther apart than the average, in-plane donor separation. In this system we have determined activation energies and studied the positive magnetoresistance effect quantitatively. We provide a detailed examination of the negative- magnetoresistance effect that stems from quantum interference of neighboring hopping paths.
Original language | English (US) |
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Pages (from-to) | 8477-8484 |
Number of pages | 8 |
Journal | Physical Review B |
Volume | 41 |
Issue number | 12 |
DOIs | |
State | Published - 1990 |
Externally published | Yes |
Bibliographical note
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