Hopping transport in doped co-deposited mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films

L. R. Wienkes, C. Blackwell, J. Kakalios

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Studies of the electronic transport properties of n-type doped hydrogenated amorphous/nanocrystalline silicon (a/nc-Si:H) films deposited in a dual-plasma co-deposition reactor are described. For these doped a/nc-Si:H, the conductivity increases monotonically for increasing crystal fractions up to 60% and displays marked deviations from a simple thermally activated temperature dependence. Analysis of the temperature dependence of the activation energy for these films finds that the dark conductivity is best described by a power-law temperature dependence, σ= σ o (T/T o) n where n= 1-4, suggesting multiphonon hopping as the main transport mechanism. These results suggest that electronic transport in mixed-phase films occurs through the a-Si:H matrix at lower nanocrystal concentrations and shifts to hopping conduction between clusters of nanocrystals at higher nanocrystal densities.

Original languageEnglish (US)
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011
Number of pages6
StatePublished - 2012
Event2011 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 25 2011Apr 29 2011

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2011 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

Bibliographical note

Funding Information:
This work was partially supported by NSF grant DMR-0705675, the NINN Characterization Facility, the Xcel Energy grant under RDF contract #RD3-25, and the University of Minnesota.


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