A theory of hopping conduction is developed for compensated crystalline and amorphous semiconductors subjected to a strong electric field. It is shown that at sufficiently low temperatures the current-voltage characteristics should be given by the equation I varies directly as exp left brace minus E//0/E)** one quarter right brace . The theory is compared with the experimental data for amorphous germanium films. The value of E//0 is deduced from the experimental data and used to estimate the characteristic length of the fall of the wave functions of the states located near the Fermi level. The paper is concluded with a discussion of the influence of longitudinal and transverse magnetic fields on the hopping conduction in a strong electric field.
|Original language||English (US)|
|Number of pages||4|
|Journal||SOV PHYS SEMICOND|
|State||Published - Jan 1 1973|