Abstract
This review deals with hopping conducting under dc conditions. A new theory of hopping conduction, based on the percolation method, is put forward. This theory makes it possible to find the dependence of the resistance on the concentration and chemical nature of impurities. It also predicts the giant hopping piezoresistance of germanium and the giant positive magnetoresistance of A**I**I**IB**V crystals in the hopping conduction region. A theoretical analysis is made of the activation energy of hopping conduction in weakly and strongly compensated semiconductors. All the theoretical conclusions are compared in detail with the experimental results.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1053-1075 |
| Number of pages | 23 |
| Journal | Sov Phys Semicond |
| Volume | 6 |
| Issue number | 7 |
| State | Published - 1973 |