Abstract
A theory of the temperature dependence of the hopping conductivity is developed for heavily doped and strongly compensated semiconductors. It is shown that in the absence of correlation in the distribution of impurities there is a wide range of temperatures in which the resistivity rho is proportional to exp left brace (T//1/T)**5**/**1**1 right brace , where T is the temperature. At temperatures T yields 0 this dependence is replaced by the Mott law rho varies directly as exp left brace (T//0/T)**1**/**4 right brace . A comparison is made between the theoretical conclusion and the experimental data on the conductivity of strongly compensated samples of InSb, CdTe, and Ge.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 77-80 |
| Number of pages | 4 |
| Journal | Sov Phys Semicond |
| Volume | 7 |
| Issue number | 1 |
| State | Published - 1973 |