Abstract
A theoretical and experimental investigation was made of the influence of fluctuations of the solid-solution composition of the hopping conduction. The experiments were carried out on gallium-doped Ge//1// minus //xSi//x solid solutions with 0 less than x less than equivalent to 0. 06. The dependence of the activation energy of hopping conduction on x is explained by two mechanisms which give rise to a scatter of levels. One of them associated with large-scale fluctuations of the value of x in the bulk of the sample and the other is due to fluctuations of the central cell potential.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1549-1553 |
| Number of pages | 5 |
| Journal | Sov Phys Semicond |
| Volume | 8 |
| Issue number | 12 |
| State | Published - 1975 |