Hole scattering in p-type wurtzite gallium nitride

J. D. Albrecht, P P Ruden

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigate acoustic phonon scattering processes for holes in wurtzite gallium nitride. Using a six-band Rashba-Sheka-Pikus Hamiltonian description of the valence bands of gallium nitride, total scattering rates are calculated by numerical integration over final states. An examination of the interband and intraband processes shows strong scattering rate anisotropy between holes moving parallel to and perpendicular to the hexagonal plane. Results are given for inelastic acoustic deformation potential and piezoelectric scattering processes involving both longitudinal and transverse acoustic phonon absorption.

Original languageEnglish (US)
Title of host publicationWide-Bandgap Electronics
Pages102-107
Number of pages6
Volume680
StatePublished - Dec 1 2001
Event2001 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 16 2001Apr 20 2001

Other

Other2001 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/16/014/20/01

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