Abstract
We investigate acoustic phonon scattering processes for holes in wurtzite gallium nitride. Using a six-band Rashba-Sheka-Pikus Hamiltonian description of the valence bands of gallium nitride, total scattering rates are calculated by numerical integration over final states. An examination of the interband and intraband processes shows strong scattering rate anisotropy between holes moving parallel to and perpendicular to the hexagonal plane. Results are given for inelastic acoustic deformation potential and piezoelectric scattering processes involving both longitudinal and transverse acoustic phonon absorption.
| Original language | English (US) |
|---|---|
| Title of host publication | Wide-Bandgap Electronics |
| Pages | 102-107 |
| Number of pages | 6 |
| Volume | 680 |
| State | Published - Dec 1 2001 |
| Event | 2001 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 16 2001 → Apr 20 2001 |
Other
| Other | 2001 MRS Spring Meeting |
|---|---|
| Country/Territory | United States |
| City | San Francisco, CA |
| Period | 4/16/01 → 4/20/01 |