Highly selective sensor for trace asenite determination using anodic stripping voltammetry

Li Wang; Gaoshan Jing; Wenshuai Lu; Tianhong Cui

doi:10.1109/MEMSYS.2016.7421776

Highly selective sensor for trace asenite determination using anodic stripping voltammetry

Li Wang, Gaoshan Jing, Wenshuai Lu, Tianhong Cui

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

An arsenite (As (III)) selective membrane of ionophore is deposited on a micro gold electrode surface to determine trace As (III) using anodic stripping voltammetry (ASV). Compared with a sensor without an ionophore membrane («bare sensor»), the selective sensor's performance is greatly improved due to the membrane's superior As (III) permselectivity. The selective sensor's background current amplitude decreased from 1.375 μA to 0.320 μA, and its standard deviation decreased from 0.150 μA to 0.007 μA, leading to a higher signal-to-noise ratio (S/N). Meanwhile, the sensor's peak current standard deviation also dropped from 0.218 μA to 0.015 μA. Thus, low limit of detection (LOD) of 1.09 ppb is obtained for determining trace As (III). This simple, but highly sensitive selective sensor may lead to wide applications to on-line environmental monitoring.

Original language	English (US)
Title of host publication	MEMS 2016 - 29th IEEE International Conference on Micro Electro Mechanical Systems
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	901-904
Number of pages	4
ISBN (Electronic)	9781509019731
DOIs	https://doi.org/10.1109/MEMSYS.2016.7421776
State	Published - Feb 26 2016
Event	29th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2016 - Shanghai, China Duration: Jan 24 2016 → Jan 28 2016

Publication series

Name	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Volume	2016-February
ISSN (Print)	1084-6999

Other

Other	29th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2016
Country/Territory	China
City	Shanghai
Period	1/24/16 → 1/28/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

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10.1109/MEMSYS.2016.7421776

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Wang, L., Jing, G., Lu, W., & Cui, T. (2016). Highly selective sensor for trace asenite determination using anodic stripping voltammetry. In MEMS 2016 - 29th IEEE International Conference on Micro Electro Mechanical Systems (pp. 901-904). Article 7421776 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); Vol. 2016-February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MEMSYS.2016.7421776

Highly selective sensor for trace asenite determination using anodic stripping voltammetry. / Wang, Li; Jing, Gaoshan; Lu, Wenshuai et al.
MEMS 2016 - 29th IEEE International Conference on Micro Electro Mechanical Systems. Institute of Electrical and Electronics Engineers Inc., 2016. p. 901-904 7421776 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); Vol. 2016-February).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wang, L, Jing, G, Lu, W & Cui, T 2016, Highly selective sensor for trace asenite determination using anodic stripping voltammetry. in MEMS 2016 - 29th IEEE International Conference on Micro Electro Mechanical Systems., 7421776, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), vol. 2016-February, Institute of Electrical and Electronics Engineers Inc., pp. 901-904, 29th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2016, Shanghai, China, 1/24/16. https://doi.org/10.1109/MEMSYS.2016.7421776

Wang L, Jing G, Lu W, Cui T. Highly selective sensor for trace asenite determination using anodic stripping voltammetry. In MEMS 2016 - 29th IEEE International Conference on Micro Electro Mechanical Systems. Institute of Electrical and Electronics Engineers Inc. 2016. p. 901-904. 7421776. (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). doi: 10.1109/MEMSYS.2016.7421776

Wang, Li ; Jing, Gaoshan ; Lu, Wenshuai et al. / Highly selective sensor for trace asenite determination using anodic stripping voltammetry. MEMS 2016 - 29th IEEE International Conference on Micro Electro Mechanical Systems. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 901-904 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

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abstract = "An arsenite (As (III)) selective membrane of ionophore is deposited on a micro gold electrode surface to determine trace As (III) using anodic stripping voltammetry (ASV). Compared with a sensor without an ionophore membrane («bare sensor»), the selective sensor's performance is greatly improved due to the membrane's superior As (III) permselectivity. The selective sensor's background current amplitude decreased from 1.375 μA to 0.320 μA, and its standard deviation decreased from 0.150 μA to 0.007 μA, leading to a higher signal-to-noise ratio (S/N). Meanwhile, the sensor's peak current standard deviation also dropped from 0.218 μA to 0.015 μA. Thus, low limit of detection (LOD) of 1.09 ppb is obtained for determining trace As (III). This simple, but highly sensitive selective sensor may lead to wide applications to on-line environmental monitoring.",

author = "Li Wang and Gaoshan Jing and Wenshuai Lu and Tianhong Cui",

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N2 - An arsenite (As (III)) selective membrane of ionophore is deposited on a micro gold electrode surface to determine trace As (III) using anodic stripping voltammetry (ASV). Compared with a sensor without an ionophore membrane («bare sensor»), the selective sensor's performance is greatly improved due to the membrane's superior As (III) permselectivity. The selective sensor's background current amplitude decreased from 1.375 μA to 0.320 μA, and its standard deviation decreased from 0.150 μA to 0.007 μA, leading to a higher signal-to-noise ratio (S/N). Meanwhile, the sensor's peak current standard deviation also dropped from 0.218 μA to 0.015 μA. Thus, low limit of detection (LOD) of 1.09 ppb is obtained for determining trace As (III). This simple, but highly sensitive selective sensor may lead to wide applications to on-line environmental monitoring.

AB - An arsenite (As (III)) selective membrane of ionophore is deposited on a micro gold electrode surface to determine trace As (III) using anodic stripping voltammetry (ASV). Compared with a sensor without an ionophore membrane («bare sensor»), the selective sensor's performance is greatly improved due to the membrane's superior As (III) permselectivity. The selective sensor's background current amplitude decreased from 1.375 μA to 0.320 μA, and its standard deviation decreased from 0.150 μA to 0.007 μA, leading to a higher signal-to-noise ratio (S/N). Meanwhile, the sensor's peak current standard deviation also dropped from 0.218 μA to 0.015 μA. Thus, low limit of detection (LOD) of 1.09 ppb is obtained for determining trace As (III). This simple, but highly sensitive selective sensor may lead to wide applications to on-line environmental monitoring.

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Highly selective sensor for trace asenite determination using anodic stripping voltammetry

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