High-voltage CMOS compatible SOI MESFET characterization and spice model extraction

Asha Balijepalli; Joseph Ervin; Punarvasu Joshi; Jinman Yang; Yu Cao; Trevor J. Thornton

doi:10.1109/MWSYM.2006.249495

High-voltage CMOS compatible SOI MESFET characterization and spice model extraction

Asha Balijepalli, Joseph Ervin, Punarvasu Joshi, Jinman Yang, Yu Cao, Trevor J. Thornton

Research output: Contribution to journal › Conference article › peer-review

9 Scopus citations

Abstract

A mature and well-established SOI CMOS process has been used to fabricate metal-semiconductor field-effect transistors (MESFETs) that operate in the gigahertz range. These 0.6μm depletion-mode SOI MESFETs exhibit a maximum breakdown voltage of 45V in spite of being fabricated using the standard 3.3V CMOS process. This high voltage capability makes the device a strong contender for applications such as power amplifiers, voltage controlled oscillators and DC-DC converters. DC and RF characterization involving breakdown voltage measurements, S-parameter measurements and small-signal parameter extraction was conducted on the device. We have customized an advanced, commercially available TOM3 SPICE MESFET model to represent the SOI MESFET. Based on extracted small-signal parameters, a simplified method to extract the charge parameters of the TOM3 capacitance model was developed. A diode subcircuit has been proposed to model the breakdown mechanism in the SOI MESFET.

Original language	English (US)
Article number	4015171
Pages (from-to)	1335-1338
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
DOIs	https://doi.org/10.1109/MWSYM.2006.249495
State	Published - 2006
Externally published	Yes
Event	2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States Duration: Jun 11 2006 → Jun 16 2006

Keywords

Electric breakdown
MESFETs
Silicon on insulator technology
SPICE

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10.1109/MWSYM.2006.249495

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title = "High-voltage CMOS compatible SOI MESFET characterization and spice model extraction",

abstract = "A mature and well-established SOI CMOS process has been used to fabricate metal-semiconductor field-effect transistors (MESFETs) that operate in the gigahertz range. These 0.6μm depletion-mode SOI MESFETs exhibit a maximum breakdown voltage of 45V in spite of being fabricated using the standard 3.3V CMOS process. This high voltage capability makes the device a strong contender for applications such as power amplifiers, voltage controlled oscillators and DC-DC converters. DC and RF characterization involving breakdown voltage measurements, S-parameter measurements and small-signal parameter extraction was conducted on the device. We have customized an advanced, commercially available TOM3 SPICE MESFET model to represent the SOI MESFET. Based on extracted small-signal parameters, a simplified method to extract the charge parameters of the TOM3 capacitance model was developed. A diode subcircuit has been proposed to model the breakdown mechanism in the SOI MESFET.",

keywords = "Electric breakdown, MESFETs, Silicon on insulator technology, SPICE",

author = "Asha Balijepalli and Joseph Ervin and Punarvasu Joshi and Jinman Yang and Yu Cao and Thornton, {Trevor J.}",

year = "2006",

doi = "10.1109/MWSYM.2006.249495",

language = "English (US)",

pages = "1335--1338",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

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note = "2006 IEEE MTT-S International Microwave Symposium Digest ; Conference date: 11-06-2006 Through 16-06-2006",

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TY - JOUR

T1 - High-voltage CMOS compatible SOI MESFET characterization and spice model extraction

AU - Balijepalli, Asha

AU - Ervin, Joseph

AU - Joshi, Punarvasu

AU - Yang, Jinman

AU - Cao, Yu

AU - Thornton, Trevor J.

PY - 2006

Y1 - 2006

N2 - A mature and well-established SOI CMOS process has been used to fabricate metal-semiconductor field-effect transistors (MESFETs) that operate in the gigahertz range. These 0.6μm depletion-mode SOI MESFETs exhibit a maximum breakdown voltage of 45V in spite of being fabricated using the standard 3.3V CMOS process. This high voltage capability makes the device a strong contender for applications such as power amplifiers, voltage controlled oscillators and DC-DC converters. DC and RF characterization involving breakdown voltage measurements, S-parameter measurements and small-signal parameter extraction was conducted on the device. We have customized an advanced, commercially available TOM3 SPICE MESFET model to represent the SOI MESFET. Based on extracted small-signal parameters, a simplified method to extract the charge parameters of the TOM3 capacitance model was developed. A diode subcircuit has been proposed to model the breakdown mechanism in the SOI MESFET.

AB - A mature and well-established SOI CMOS process has been used to fabricate metal-semiconductor field-effect transistors (MESFETs) that operate in the gigahertz range. These 0.6μm depletion-mode SOI MESFETs exhibit a maximum breakdown voltage of 45V in spite of being fabricated using the standard 3.3V CMOS process. This high voltage capability makes the device a strong contender for applications such as power amplifiers, voltage controlled oscillators and DC-DC converters. DC and RF characterization involving breakdown voltage measurements, S-parameter measurements and small-signal parameter extraction was conducted on the device. We have customized an advanced, commercially available TOM3 SPICE MESFET model to represent the SOI MESFET. Based on extracted small-signal parameters, a simplified method to extract the charge parameters of the TOM3 capacitance model was developed. A diode subcircuit has been proposed to model the breakdown mechanism in the SOI MESFET.

KW - Electric breakdown

KW - MESFETs

KW - Silicon on insulator technology

KW - SPICE

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AN - SCOPUS:34250362380

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SP - 1335

EP - 1338

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

M1 - 4015171

T2 - 2006 IEEE MTT-S International Microwave Symposium Digest

Y2 - 11 June 2006 through 16 June 2006

ER -

High-voltage CMOS compatible SOI MESFET characterization and spice model extraction

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