High-Tm relaxor ferroelectrics: 0.3BiScO3-0.6PbTiO3-0.1Pb(Mn1/3Nb2/3 ) O3

Jungho Ryu, Shashank Priya, Kenji Uchino

Research output: Contribution to journalArticlepeer-review

30 Scopus citations


The development of high-Tm relaxor materials for high-temperature high-power density electrotransduction applications and high-temperature capacitors in automobile applications was studied. The relaxor behavior was confirmed by studying polarization reversal and frequency and temperature dependent dielectric constant behavior. It was found that the relaxor behavior arose due to the creation of the chemical heterogeneity by localized cationic ordering which depends on the substitution rate.

Original languageEnglish (US)
Pages (from-to)251-253
Number of pages3
JournalApplied Physics Letters
Issue number2
StatePublished - Jan 13 2003
Externally publishedYes


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