TY - JOUR
T1 - High-transconductance organic thin-film electrochemical transistors for driving low-voltage red-green-blue active matrix organic light-emitting devices
AU - Braga, Daniele
AU - Erickson, Nicholas C.
AU - Renn, Michael J.
AU - Holmes, Russell J.
AU - Frisbie, C. Daniel
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2012/4/24
Y1 - 2012/4/24
N2 - Switching and control of efficient red, green, and blue active matrix organic light-emitting devices (AMOLEDs) by printed organic thin-film electrochemical transistors (OETs) are demonstrated. These all-organic pixels are characterized by high luminance at low operating voltages and by extremely small transistor dimensions with respect to the OLED active area. A maximum brightness of ≈900 cd m -2 is achieved at diode supply voltages near 4 V and pixel selector (gate) voltages below 1 V. The ratio of OLED to OET area is greater than 100:1 and the pixels may be switched at rates up to 100 Hz. Essential to this demonstration are the use of a high capacitance electrolyte as the gate dielectric layer in the OETs, which affords extremely large transistor transconductances, and novel graded emissive layer (G-EML) OLED architectures that exhibit low turn-on voltages and high luminescence efficiency. Collectively, these results suggest that printed OETs, combined with efficient, low voltage OLEDs, could be employed in the fabrication of flexible full-color AMOLED displays.
AB - Switching and control of efficient red, green, and blue active matrix organic light-emitting devices (AMOLEDs) by printed organic thin-film electrochemical transistors (OETs) are demonstrated. These all-organic pixels are characterized by high luminance at low operating voltages and by extremely small transistor dimensions with respect to the OLED active area. A maximum brightness of ≈900 cd m -2 is achieved at diode supply voltages near 4 V and pixel selector (gate) voltages below 1 V. The ratio of OLED to OET area is greater than 100:1 and the pixels may be switched at rates up to 100 Hz. Essential to this demonstration are the use of a high capacitance electrolyte as the gate dielectric layer in the OETs, which affords extremely large transistor transconductances, and novel graded emissive layer (G-EML) OLED architectures that exhibit low turn-on voltages and high luminescence efficiency. Collectively, these results suggest that printed OETs, combined with efficient, low voltage OLEDs, could be employed in the fabrication of flexible full-color AMOLED displays.
KW - active matrix organic light-emitting displays
KW - ionic liquids
KW - organic light-emitting diodes
KW - organic thin-film electrochemical transistors
KW - printed electronics
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U2 - 10.1002/adfm.201102075
DO - 10.1002/adfm.201102075
M3 - Article
AN - SCOPUS:84859854234
VL - 22
SP - 1623
EP - 1631
JO - Advanced Functional Materials
JF - Advanced Functional Materials
SN - 1616-301X
IS - 8
ER -