High-speed waveguide-coupled graphene-on-graphene optical modulators

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Abstract

An electro-absorption optical modulator concept based upon a dual-graphene layer is presented. The device consists of a silicon-on-insulator waveguide upon which two graphene layers reside, separated by a thin insulating region. The lower graphene acts as a tunable absorber, while the upper layer functions as a transparent gate electrode. Calculations based upon realistic graphene material properties show that 3-dB bandwidths over 120 GHz (30 GHz) are achievable at near- (λ = 1.55 μm) and mid- (λ = 3.5 μm) infrared bands. The effect of background doping and potential fluctuations on the bandwidth, modulation depth, and insertion loss are also quantified.

Original languageEnglish (US)
Article number171107
JournalApplied Physics Letters
Volume100
Issue number17
DOIs
StatePublished - Apr 23 2012

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