High-speed Germanium-on-SOI lateral PIN photodiodes

G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, A. Grill

Research output: Contribution to journalArticle

136 Scopus citations

Abstract

We report the fabrication and characterization of high-speed germanium on silicon-on-insulator lateral PIN photodetectors. At an incident wavelength of 850 nm, 10 × 10-μm detectors with finger spacing S of 0.4 μm (0.6 μm) produced a - 3-dB bandwidth of 29 GHz (27 GHz at a bias voltage of - 1 V. The detectors with S = 0.6 μm had external quantum efficiency of 34% at 850 nm and 46% at 900 nm and dark current of 0.02 μA at - 1-V bias.

Original languageEnglish (US)
Pages (from-to)2547-2549
Number of pages3
JournalIEEE Photonics Technology Letters
Volume16
Issue number11
DOIs
StatePublished - Nov 1 2004

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    Dehlinger, G., Koester, S. J., Schaub, J. D., Chu, J. O., Ouyang, Q. C., & Grill, A. (2004). High-speed Germanium-on-SOI lateral PIN photodiodes. IEEE Photonics Technology Letters, 16(11), 2547-2549. https://doi.org/10.1109/LPT.2004.835631