Silicon carbide films were deposited by radio frequency thermal plasma chemical vapor deposition (CVD) at rates up to several hundred micrometers per hour over a 40-mm diameter substrate. The films were primarily β-phase SiC. Film morphology was characterized by columnar growth terminating in hemispherical surfaces. The average crystallite size as determined by X-ray diffraction line broadening ranged from about 5 to 100 nm, and increased with increasing substrate temperature. The film growth rate varied linearly with the input flow rate of SiCl4 precursor, and appeared to be independent of substrate temperature over the range 680-1215 °C.
Bibliographical noteFunding Information:
This work was partially supported by the National Science Foundation (CTS-9910718) and by the Minnesota Supercomputing Institute.
- Chemical vapor deposition
- Si tetrachlorine precursor
- Silicon carbide
- Thermal plasmas
- Thin films