High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma

F. Liao, S. Park, J. M. Larson, M. R. Zachariah, S. L. Girshick

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

Silicon carbide films were deposited by radio frequency thermal plasma chemical vapor deposition (CVD) at rates up to several hundred micrometers per hour over a 40-mm diameter substrate. The films were primarily β-phase SiC. Film morphology was characterized by columnar growth terminating in hemispherical surfaces. The average crystallite size as determined by X-ray diffraction line broadening ranged from about 5 to 100 nm, and increased with increasing substrate temperature. The film growth rate varied linearly with the input flow rate of SiCl4 precursor, and appeared to be independent of substrate temperature over the range 680-1215 °C.

Original languageEnglish (US)
Pages (from-to)1982-1986
Number of pages5
JournalMaterials Letters
Volume57
Issue number13-14
DOIs
StatePublished - Apr 2003

Bibliographical note

Funding Information:
This work was partially supported by the National Science Foundation (CTS-9910718) and by the Minnesota Supercomputing Institute.

Keywords

  • Ceramics
  • Chemical vapor deposition
  • Nanomaterials
  • Si tetrachlorine precursor
  • Silicon carbide
  • Thermal plasmas
  • Thin films

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