High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma

F. Liao; S. Park; J. M. Larson; M. R. Zachariah; S. L. Girshick

doi:10.1016/S0167-577X(02)01116-3

High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma

F. Liao, S. Park, J. M. Larson, M. R. Zachariah, S. L. Girshick

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

Silicon carbide films were deposited by radio frequency thermal plasma chemical vapor deposition (CVD) at rates up to several hundred micrometers per hour over a 40-mm diameter substrate. The films were primarily β-phase SiC. Film morphology was characterized by columnar growth terminating in hemispherical surfaces. The average crystallite size as determined by X-ray diffraction line broadening ranged from about 5 to 100 nm, and increased with increasing substrate temperature. The film growth rate varied linearly with the input flow rate of SiCl₄ precursor, and appeared to be independent of substrate temperature over the range 680-1215 °C.

Original language	English (US)
Pages (from-to)	1982-1986
Number of pages	5
Journal	Materials Letters
Volume	57
Issue number	13-14
DOIs	https://doi.org/10.1016/S0167-577X(02)01116-3
State	Published - Apr 2003

Bibliographical note

Funding Information:
This work was partially supported by the National Science Foundation (CTS-9910718) and by the Minnesota Supercomputing Institute.

Keywords

Ceramics
Chemical vapor deposition
Nanomaterials
Si tetrachlorine precursor
Silicon carbide
Thermal plasmas
Thin films

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10.1016/S0167-577X(02)01116-3

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title = "High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma",

abstract = "Silicon carbide films were deposited by radio frequency thermal plasma chemical vapor deposition (CVD) at rates up to several hundred micrometers per hour over a 40-mm diameter substrate. The films were primarily β-phase SiC. Film morphology was characterized by columnar growth terminating in hemispherical surfaces. The average crystallite size as determined by X-ray diffraction line broadening ranged from about 5 to 100 nm, and increased with increasing substrate temperature. The film growth rate varied linearly with the input flow rate of SiCl4 precursor, and appeared to be independent of substrate temperature over the range 680-1215 °C.",

keywords = "Ceramics, Chemical vapor deposition, Nanomaterials, Si tetrachlorine precursor, Silicon carbide, Thermal plasmas, Thin films",

author = "F. Liao and S. Park and Larson, {J. M.} and Zachariah, {M. R.} and Girshick, {S. L.}",

note = "Funding Information: This work was partially supported by the National Science Foundation (CTS-9910718) and by the Minnesota Supercomputing Institute.",

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doi = "10.1016/S0167-577X(02)01116-3",

language = "English (US)",

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T1 - High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma

AU - Liao, F.

AU - Park, S.

AU - Larson, J. M.

AU - Zachariah, M. R.

AU - Girshick, S. L.

N1 - Funding Information: This work was partially supported by the National Science Foundation (CTS-9910718) and by the Minnesota Supercomputing Institute.

PY - 2003/4

Y1 - 2003/4

N2 - Silicon carbide films were deposited by radio frequency thermal plasma chemical vapor deposition (CVD) at rates up to several hundred micrometers per hour over a 40-mm diameter substrate. The films were primarily β-phase SiC. Film morphology was characterized by columnar growth terminating in hemispherical surfaces. The average crystallite size as determined by X-ray diffraction line broadening ranged from about 5 to 100 nm, and increased with increasing substrate temperature. The film growth rate varied linearly with the input flow rate of SiCl4 precursor, and appeared to be independent of substrate temperature over the range 680-1215 °C.

AB - Silicon carbide films were deposited by radio frequency thermal plasma chemical vapor deposition (CVD) at rates up to several hundred micrometers per hour over a 40-mm diameter substrate. The films were primarily β-phase SiC. Film morphology was characterized by columnar growth terminating in hemispherical surfaces. The average crystallite size as determined by X-ray diffraction line broadening ranged from about 5 to 100 nm, and increased with increasing substrate temperature. The film growth rate varied linearly with the input flow rate of SiCl4 precursor, and appeared to be independent of substrate temperature over the range 680-1215 °C.

KW - Ceramics

KW - Chemical vapor deposition

KW - Nanomaterials

KW - Si tetrachlorine precursor

KW - Silicon carbide

KW - Thermal plasmas

KW - Thin films

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U2 - 10.1016/S0167-577X(02)01116-3

DO - 10.1016/S0167-577X(02)01116-3

M3 - Article

AN - SCOPUS:0037378306

SN - 0167-577X

VL - 57

SP - 1982

EP - 1986

JO - Materials Letters

JF - Materials Letters

IS - 13-14

ER -

High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma

Abstract

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