We demonstrate layer transfer of 150 nm of Si from a 200-mm, silicon-on-insulator (SOI) substrate onto a sapphire substrate using low-temperature wafer bonding (T = 150°C). The crystalline quality and the thermal stability of the transferred Si layer were characterized by x-ray diffraction (XRD). A broadening of the (004) Si peak is observed only for anneal temperatures TA ≥ 800°C, indicating some degradation of the crystalline quality of the transferred Si film above these temperatures. The measured electron Hall mobility in the bonded Si layer is comparable to bulk silicon for TA ≤ 800°C, indicating excellent material quality.
Bibliographical noteFunding Information:
The authors acknowledge the partial support of DARPA under SPAWAR Contract No. N66001-00-C-8086.
- Layer transfer
- Wafer bonding