High-quality crystalline layer transfer from a silicon-on-insulator substrate onto a sapphire substrate using wafer bonding

D. V. Singh, L. Shi, K. W. Guarini, P. M. Mooney, S. J. Koester, A. Grill

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

We demonstrate layer transfer of 150 nm of Si from a 200-mm, silicon-on-insulator (SOI) substrate onto a sapphire substrate using low-temperature wafer bonding (T = 150°C). The crystalline quality and the thermal stability of the transferred Si layer were characterized by x-ray diffraction (XRD). A broadening of the (004) Si peak is observed only for anneal temperatures TA ≥ 800°C, indicating some degradation of the crystalline quality of the transferred Si film above these temperatures. The measured electron Hall mobility in the bonded Si layer is comparable to bulk silicon for TA ≤ 800°C, indicating excellent material quality.

Original languageEnglish (US)
Pages (from-to)1339-1343
Number of pages5
JournalJournal of Electronic Materials
Volume32
Issue number11
DOIs
StatePublished - Nov 2003

Keywords

  • Layer transfer
  • Sapphire
  • Wafer bonding

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