High Q optomechanical resonators in silicon nitride nanophotonic circuits

K. Y. Fong, W. H.P. Pernice, Mo Li, H. X. Tang

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Abstract

We demonstrate integrated photonic circuits made from stoichiometric silicon nitride for effective integration of high Q micromechanical resonators and nano-optical components. Using silicon bulk micromachining techniques we fabricate free-standing highly tensile nanostrings exceeding 400 μm in length. The nanostrings are actuated using gradient optical force and their mechanical motion is readout with a sensitive interferometric scheme. A mechanical Q of 340 000 is obtained in vacuum. This fully integrated optomechanical circuit presents a promising scheme for on-chip high Q mechanical sensing applications.

Original languageEnglish (US)
Article number073112
JournalApplied Physics Letters
Volume97
Issue number7
DOIs
StatePublished - Aug 16 2010

Bibliographical note

Funding Information:
This work was supported by a seedling program from DARPA/MTO and the DARPA/MTO ORCHID program through a grant from AFOSR (Award No. FA9550–10–1-0297). We are grateful to Michael Rooks for his help with the ebeam lithography. H.X.T. acknowledges support from a Packard Fellowship and a CAREER award from the National Science Foundation. W. H. P. Pernice would like to thank the Alexander-von-Humboldt foundation for providing a postdoctoral fellowship. Ebeam lithography was carried out at the Center for Functional Nanomaterials, Brookhaven National Laboratory, which is supported by the U.S. Department of Energy, Office of Basic Energy Sciences, under Contract No. DE-AC02–98CH10886.

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