High-Q FDSOI varactors for wireless radiation sensing

G. Vaidhyanathan, S. J. Koester

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

A high-Q radiation-sensitive varactor design based on fully-depeleted silicon-on-insulator (FDSOI) for telemetric readout systems is described. A multi-finger device design is evaluated, and the design parameters for maximizing tuning range and quality factor are simulated. Varactors with L g = 300 nm and t SOI = 20 nm are found to provide 2.5:1 capacitance tuning range and Q > 100 at f = 1 GHz.

Original languageEnglish (US)
Title of host publicationIEEE International SOI Conference, SOI 2011
DOIs
StatePublished - Dec 20 2011
Event2011 IEEE International SOI Conference, SOI 2011 - Tempe, AZ, United States
Duration: Oct 3 2011Oct 6 2011

Publication series

NameProceedings - IEEE International SOI Conference
ISSN (Print)1078-621X

Conference

Conference2011 IEEE International SOI Conference, SOI 2011
CountryUnited States
CityTempe, AZ
Period10/3/1110/6/11

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