TY - GEN
T1 - High-Q FDSOI varactors for wireless radiation sensing
AU - Vaidhyanathan, G.
AU - Koester, S. J.
PY - 2011
Y1 - 2011
N2 - A high-Q radiation-sensitive varactor design based on fully-depeleted silicon-on-insulator (FDSOI) for telemetric readout systems is described. A multi-finger device design is evaluated, and the design parameters for maximizing tuning range and quality factor are simulated. Varactors with L g = 300 nm and t SOI = 20 nm are found to provide 2.5:1 capacitance tuning range and Q > 100 at f = 1 GHz.
AB - A high-Q radiation-sensitive varactor design based on fully-depeleted silicon-on-insulator (FDSOI) for telemetric readout systems is described. A multi-finger device design is evaluated, and the design parameters for maximizing tuning range and quality factor are simulated. Varactors with L g = 300 nm and t SOI = 20 nm are found to provide 2.5:1 capacitance tuning range and Q > 100 at f = 1 GHz.
UR - http://www.scopus.com/inward/record.url?scp=83455213652&partnerID=8YFLogxK
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U2 - 10.1109/SOI.2011.6081693
DO - 10.1109/SOI.2011.6081693
M3 - Conference contribution
AN - SCOPUS:83455213652
SN - 9781612847597
T3 - Proceedings - IEEE International SOI Conference
BT - IEEE International SOI Conference, SOI 2011
T2 - 2011 IEEE International SOI Conference, SOI 2011
Y2 - 3 October 2011 through 6 October 2011
ER -