High-performance undoped-body 8-nm-thin SOI field-effect transistors

Amlan Majumdar; Zhibin Ren; Jeffrey W. Sleight; David Dobuzinsky; Judson R. Holt; Raj Venigalla; Steven J. Koester; Wilfried Haensch

doi:10.1109/LED.2008.920975

High-performance undoped-body 8-nm-thin SOI field-effect transistors

Amlan Majumdar, Zhibin Ren, Jeffrey W. Sleight, David Dobuzinsky, Judson R. Holt, Raj Venigalla, Steven J. Koester, Wilfried Haensch

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

We have fabricated undoped-body short-channel extremely thin silicon-on-insulator (ETSOI) field-effect transistors (FETs) with 8-nm SOI thickness that exhibit the expected short-channel benefit compared with doped partially depleted SOI (PDSOI) FETs. Using a source/drain extension (SDE) last process with the SDE implants activated with diffusionless laser anneal, we demonstrate that the series resistance penalty can be minimized, which leads to ETSOI FET drive currents that are comparable to those of conventional thick-body PDSOI FETs.

Original language	English (US)
Pages (from-to)	515-517
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	5
DOIs	https://doi.org/10.1109/LED.2008.920975
State	Published - May 2008

Keywords

CMOSFETs
Epitaxial growth
Ion implantation

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10.1109/LED.2008.920975

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title = "High-performance undoped-body 8-nm-thin SOI field-effect transistors",

abstract = "We have fabricated undoped-body short-channel extremely thin silicon-on-insulator (ETSOI) field-effect transistors (FETs) with 8-nm SOI thickness that exhibit the expected short-channel benefit compared with doped partially depleted SOI (PDSOI) FETs. Using a source/drain extension (SDE) last process with the SDE implants activated with diffusionless laser anneal, we demonstrate that the series resistance penalty can be minimized, which leads to ETSOI FET drive currents that are comparable to those of conventional thick-body PDSOI FETs.",

keywords = "CMOSFETs, Epitaxial growth, Ion implantation",

author = "Amlan Majumdar and Zhibin Ren and Sleight, {Jeffrey W.} and David Dobuzinsky and Holt, {Judson R.} and Raj Venigalla and Koester, {Steven J.} and Wilfried Haensch",

year = "2008",

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doi = "10.1109/LED.2008.920975",

language = "English (US)",

volume = "29",

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T1 - High-performance undoped-body 8-nm-thin SOI field-effect transistors

AU - Majumdar, Amlan

AU - Ren, Zhibin

AU - Sleight, Jeffrey W.

AU - Dobuzinsky, David

AU - Holt, Judson R.

AU - Venigalla, Raj

AU - Koester, Steven J.

AU - Haensch, Wilfried

PY - 2008/5

Y1 - 2008/5

N2 - We have fabricated undoped-body short-channel extremely thin silicon-on-insulator (ETSOI) field-effect transistors (FETs) with 8-nm SOI thickness that exhibit the expected short-channel benefit compared with doped partially depleted SOI (PDSOI) FETs. Using a source/drain extension (SDE) last process with the SDE implants activated with diffusionless laser anneal, we demonstrate that the series resistance penalty can be minimized, which leads to ETSOI FET drive currents that are comparable to those of conventional thick-body PDSOI FETs.

AB - We have fabricated undoped-body short-channel extremely thin silicon-on-insulator (ETSOI) field-effect transistors (FETs) with 8-nm SOI thickness that exhibit the expected short-channel benefit compared with doped partially depleted SOI (PDSOI) FETs. Using a source/drain extension (SDE) last process with the SDE implants activated with diffusionless laser anneal, we demonstrate that the series resistance penalty can be minimized, which leads to ETSOI FET drive currents that are comparable to those of conventional thick-body PDSOI FETs.

KW - CMOSFETs

KW - Epitaxial growth

KW - Ion implantation

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DO - 10.1109/LED.2008.920975

M3 - Article

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EP - 517

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

High-performance undoped-body 8-nm-thin SOI field-effect transistors

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