High-performance undoped-body 8-nm-thin SOI field-effect transistors

Amlan Majumdar, Zhibin Ren, Jeffrey W. Sleight, David Dobuzinsky, Judson R. Holt, Raj Venigalla, Steven J. Koester, Wilfried Haensch

Research output: Contribution to journalArticle

29 Scopus citations

Abstract

We have fabricated undoped-body short-channel extremely thin silicon-on-insulator (ETSOI) field-effect transistors (FETs) with 8-nm SOI thickness that exhibit the expected short-channel benefit compared with doped partially depleted SOI (PDSOI) FETs. Using a source/drain extension (SDE) last process with the SDE implants activated with diffusionless laser anneal, we demonstrate that the series resistance penalty can be minimized, which leads to ETSOI FET drive currents that are comparable to those of conventional thick-body PDSOI FETs.

Original languageEnglish (US)
Pages (from-to)515-517
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number5
DOIs
StatePublished - May 1 2008

Keywords

  • CMOSFETs
  • Epitaxial growth
  • Ion implantation

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    Majumdar, A., Ren, Z., Sleight, J. W., Dobuzinsky, D., Holt, J. R., Venigalla, R., Koester, S. J., & Haensch, W. (2008). High-performance undoped-body 8-nm-thin SOI field-effect transistors. IEEE Electron Device Letters, 29(5), 515-517. https://doi.org/10.1109/LED.2008.920975