High-performance undoped-body 8-nm-thin SOI field-effect transistors

Amlan Majumdar, Zhibin Ren, Jeffrey W. Sleight, David Dobuzinsky, Judson R. Holt, Raj Venigalla, Steven J. Koester, Wilfried Haensch

Research output: Contribution to journalArticlepeer-review

30 Scopus citations


We have fabricated undoped-body short-channel extremely thin silicon-on-insulator (ETSOI) field-effect transistors (FETs) with 8-nm SOI thickness that exhibit the expected short-channel benefit compared with doped partially depleted SOI (PDSOI) FETs. Using a source/drain extension (SDE) last process with the SDE implants activated with diffusionless laser anneal, we demonstrate that the series resistance penalty can be minimized, which leads to ETSOI FET drive currents that are comparable to those of conventional thick-body PDSOI FETs.

Original languageEnglish (US)
Pages (from-to)515-517
Number of pages3
JournalIEEE Electron Device Letters
Issue number5
StatePublished - May 2008


  • Epitaxial growth
  • Ion implantation


Dive into the research topics of 'High-performance undoped-body 8-nm-thin SOI field-effect transistors'. Together they form a unique fingerprint.

Cite this