High performance sputtered thermoelectric junctions for micromechanical devices

R. P. Shea; A. S. Gawarikar; J. J. Talghader

doi:10.31438/trf.hh2012.70

High performance sputtered thermoelectric junctions for micromechanical devices

R. P. Shea
, A. S. Gawarikar
, J. J. Talghader

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

The deposition and characterization of thin co-sputtered Bi₂Te₃ and Sb₂Te₃ thermoelectric films of thickness comparable to the carrier mean free path is presented. Measurements of the Seebeck coefficient, resistivity, and thermal conductivity are described. The test microstructures are highly thermally isolated and incorporate a micro-heater and thermoelectric junction. Two compositions of each material have been studied. The Sb₂Te₃ shows resistivities of 29.72μω-m and 26.22μω-m, Seebeck coefficients of 118μV/K and 131μV/K, and a thermal conductivity of 1.02Wm^-1K^-1, while the Bi₂Te₃ films show resistivities of 5.22μω-m and 6.15μω-m, Seebeck coefficients of-51μV/K and-50μV/K, and a thermal conductivity of .88Wm^-1K^-1. The materials systems exhibit thermoelectric figures of merit of 0.93x10^-3 and 1.23x10^-3.

Original language	English (US)
Title of host publication	2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012
Editors	Mehran Mehregany, David J. Monk
Publisher	Transducer Research Foundation
Pages	258-261
Number of pages	4
ISBN (Electronic)	9780964002494
DOIs	https://doi.org/10.31438/trf.hh2012.70
State	Published - 2012
Event	2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012 - Hilton Head, United States Duration: Jun 3 2012 → Jun 7 2012

Publication series

Name	Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop

Other

Other	2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012
Country/Territory	United States
City	Hilton Head
Period	6/3/12 → 6/7/12

Bibliographical note

Publisher Copyright:
© 2012 TRF.

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10.31438/trf.hh2012.70

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Shea, R. P., Gawarikar, A. S., & Talghader, J. J. (2012). High performance sputtered thermoelectric junctions for micromechanical devices. In M. Mehregany, & D. J. Monk (Eds.), 2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012 (pp. 258-261). (Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop). Transducer Research Foundation. https://doi.org/10.31438/trf.hh2012.70

High performance sputtered thermoelectric junctions for micromechanical devices. / Shea, R. P.; Gawarikar, A. S.; Talghader, J. J.
2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012. ed. / Mehran Mehregany; David J. Monk. Transducer Research Foundation, 2012. p. 258-261 (Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shea, RP, Gawarikar, AS & Talghader, JJ 2012, High performance sputtered thermoelectric junctions for micromechanical devices. in M Mehregany & DJ Monk (eds), 2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012. Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop, Transducer Research Foundation, pp. 258-261, 2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012, Hilton Head, United States, 6/3/12. https://doi.org/10.31438/trf.hh2012.70

Shea RP, Gawarikar AS, Talghader JJ. High performance sputtered thermoelectric junctions for micromechanical devices. In Mehregany M, Monk DJ, editors, 2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012. Transducer Research Foundation. 2012. p. 258-261. (Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop). doi: 10.31438/trf.hh2012.70

Shea, R. P. ; Gawarikar, A. S. ; Talghader, J. J. / High performance sputtered thermoelectric junctions for micromechanical devices. 2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012. editor / Mehran Mehregany ; David J. Monk. Transducer Research Foundation, 2012. pp. 258-261 (Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop).

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title = "High performance sputtered thermoelectric junctions for micromechanical devices",

abstract = "The deposition and characterization of thin co-sputtered Bi2Te3 and Sb2Te3 thermoelectric films of thickness comparable to the carrier mean free path is presented. Measurements of the Seebeck coefficient, resistivity, and thermal conductivity are described. The test microstructures are highly thermally isolated and incorporate a micro-heater and thermoelectric junction. Two compositions of each material have been studied. The Sb2Te3 shows resistivities of 29.72μω-m and 26.22μω-m, Seebeck coefficients of 118μV/K and 131μV/K, and a thermal conductivity of 1.02Wm-1K-1, while the Bi2Te3 films show resistivities of 5.22μω-m and 6.15μω-m, Seebeck coefficients of-51μV/K and-50μV/K, and a thermal conductivity of .88Wm-1K-1. The materials systems exhibit thermoelectric figures of merit of 0.93x10-3 and 1.23x10-3.",

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N2 - The deposition and characterization of thin co-sputtered Bi2Te3 and Sb2Te3 thermoelectric films of thickness comparable to the carrier mean free path is presented. Measurements of the Seebeck coefficient, resistivity, and thermal conductivity are described. The test microstructures are highly thermally isolated and incorporate a micro-heater and thermoelectric junction. Two compositions of each material have been studied. The Sb2Te3 shows resistivities of 29.72μω-m and 26.22μω-m, Seebeck coefficients of 118μV/K and 131μV/K, and a thermal conductivity of 1.02Wm-1K-1, while the Bi2Te3 films show resistivities of 5.22μω-m and 6.15μω-m, Seebeck coefficients of-51μV/K and-50μV/K, and a thermal conductivity of .88Wm-1K-1. The materials systems exhibit thermoelectric figures of merit of 0.93x10-3 and 1.23x10-3.

AB - The deposition and characterization of thin co-sputtered Bi2Te3 and Sb2Te3 thermoelectric films of thickness comparable to the carrier mean free path is presented. Measurements of the Seebeck coefficient, resistivity, and thermal conductivity are described. The test microstructures are highly thermally isolated and incorporate a micro-heater and thermoelectric junction. Two compositions of each material have been studied. The Sb2Te3 shows resistivities of 29.72μω-m and 26.22μω-m, Seebeck coefficients of 118μV/K and 131μV/K, and a thermal conductivity of 1.02Wm-1K-1, while the Bi2Te3 films show resistivities of 5.22μω-m and 6.15μω-m, Seebeck coefficients of-51μV/K and-50μV/K, and a thermal conductivity of .88Wm-1K-1. The materials systems exhibit thermoelectric figures of merit of 0.93x10-3 and 1.23x10-3.

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ER -

High performance sputtered thermoelectric junctions for micromechanical devices

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