High-performance silicon-germanium technology

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Photodetector 100%
• Silicon Layer 100%
• Microwave Frequency 100%
• Process Improvement 50%
• Electron Optical Lithography 50%
• Single Chip 50%
• Gate Length 50%
• Good Performance 50%
• Lithography 50%
• Metallizations 50%
• Process Design 50%
• Component Device 50%
• Fabricator 50%
• Silicon Technology 50%
• Process Requirement 50%
• Silicon Wafer 50%
• Moore's Law 50%

Keyphrases

• High Performance 100%
• Silicon-germanium Technology 100%
• Silicon-germanium 100%
• MOSFET 18%
• Microwave Frequency 18%
• Potato 9%
• Photodetector 9%
• Transistor 9%
• III-V 9%
• Process Improvement 9%
• New Markets 9%
• Design Process 9%
• Silicon Wafer 9%
• Meat 9%
• Electron Beam Lithography 9%
• Process Requirements 9%
• Single chip 9%
• Gate Length 9%
• Uniform Strain 9%
• Silicon Layer 9%
• Design Trade-offs 9%
• Metallization 9%
• Wireless Local Area Network (WLAN) 9%
• Modulation-doped Field-effect Transistor (MODFET) 9%
• Lithography 9%
• Moore's Law 9%
• Germanium Source 9%
• Integrated Photodetector 9%
• Mobility Improvement 9%
• Strained Silicon Layers 9%
• Fabricator 9%
• Mature Technology 9%
• Silicon Technology 9%
• Semiconductor Technology 9%
• Silicon CMOS 9%
• InP HEMT 9%
• Manufacturable 9%
• 60 GHz Communications 9%
• Microwave Performance 9%
• Device Components 9%
• Microwave Losses 9%
• Silicon-based Semiconductors 9%
• Inverted Channel 9%
• Silicon-germanium HBT 9%