High-performance SiGe MODFET technology

S. J. Koester; J. O. Chu; K. L. Saenger; Q. C. Ouyang; J. A. Ott; D. F. Canaperi; J. A. Tornello; C. V. Jahnes; S. E. Steen

High-performance SiGe MODFET technology

S. J. Koester
, J. O. Chu
, K. L. Saenger
, Q. C. Ouyang
, J. A. Ott
, D. F. Canaperi
, J. A. Tornello
, C. V. Jahnes
, S. E. Steen

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

An overview of SiGe modulation-doped field-effect transistor (MODFET) technology is provided. The layer structures and mobility enhancements for both p- and n-channel modulation-doped quantum wells are described and compared to mobilities in Si/SiO ₂ inversion layers. Next, previous results on high-performance n- and p-MODFETs fabricated at IBM and elsewhere are reviewed, followed by recent results on laterally-scaled Si/SiGe n-MODFETs with gate lengths as small as 70 nm. We conclude with a discussion of the materials issues for the future vertical and lateral scaling of SiGe MODFETs.

Original language	English (US)
Pages (from-to)	171-179
Number of pages	9
Journal	Materials Research Society Symposium Proceedings
Volume	809
State	Published - Dec 1 2004
Event	High-Mobility Group-IV Materials and Devices - San Francisco, CA, United States Duration: Apr 13 2004 → Apr 15 2004

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@article{41e64742f1004b85a6a3d3630dbb78f6,

title = "High-performance SiGe MODFET technology",

abstract = "An overview of SiGe modulation-doped field-effect transistor (MODFET) technology is provided. The layer structures and mobility enhancements for both p- and n-channel modulation-doped quantum wells are described and compared to mobilities in Si/SiO 2 inversion layers. Next, previous results on high-performance n- and p-MODFETs fabricated at IBM and elsewhere are reviewed, followed by recent results on laterally-scaled Si/SiGe n-MODFETs with gate lengths as small as 70 nm. We conclude with a discussion of the materials issues for the future vertical and lateral scaling of SiGe MODFETs.",

author = "Koester, \{S. J.\} and Chu, \{J. O.\} and Saenger, \{K. L.\} and Ouyang, \{Q. C.\} and Ott, \{J. A.\} and Canaperi, \{D. F.\} and Tornello, \{J. A.\} and Jahnes, \{C. V.\} and Steen, \{S. E.\}",

year = "2004",

month = dec,

day = "1",

language = "English (US)",

volume = "809",

pages = "171--179",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "High-Mobility Group-IV Materials and Devices ; Conference date: 13-04-2004 Through 15-04-2004",

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TY - JOUR

T1 - High-performance SiGe MODFET technology

AU - Koester, S. J.

AU - Chu, J. O.

AU - Saenger, K. L.

AU - Ouyang, Q. C.

AU - Ott, J. A.

AU - Canaperi, D. F.

AU - Tornello, J. A.

AU - Jahnes, C. V.

AU - Steen, S. E.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - An overview of SiGe modulation-doped field-effect transistor (MODFET) technology is provided. The layer structures and mobility enhancements for both p- and n-channel modulation-doped quantum wells are described and compared to mobilities in Si/SiO 2 inversion layers. Next, previous results on high-performance n- and p-MODFETs fabricated at IBM and elsewhere are reviewed, followed by recent results on laterally-scaled Si/SiGe n-MODFETs with gate lengths as small as 70 nm. We conclude with a discussion of the materials issues for the future vertical and lateral scaling of SiGe MODFETs.

AB - An overview of SiGe modulation-doped field-effect transistor (MODFET) technology is provided. The layer structures and mobility enhancements for both p- and n-channel modulation-doped quantum wells are described and compared to mobilities in Si/SiO 2 inversion layers. Next, previous results on high-performance n- and p-MODFETs fabricated at IBM and elsewhere are reviewed, followed by recent results on laterally-scaled Si/SiGe n-MODFETs with gate lengths as small as 70 nm. We conclude with a discussion of the materials issues for the future vertical and lateral scaling of SiGe MODFETs.

UR - https://www.scopus.com/pages/publications/12744267789

UR - https://www.scopus.com/pages/publications/12744267789#tab=citedBy

M3 - Conference article

AN - SCOPUS:12744267789

SN - 0272-9172

VL - 809

SP - 171

EP - 179

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - High-Mobility Group-IV Materials and Devices

Y2 - 13 April 2004 through 15 April 2004

ER -

High-performance SiGe MODFET technology

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