High-performance SiGe MODFET technology

S. J. Koester, J. O. Chu, K. L. Saenger, Q. C. Ouyang, J. A. Ott, D. F. Canaperi, J. A. Tornello, C. V. Jahnes, S. E. Steen

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

Abstract

An overview of SiGe modulation-doped field-effect transistor (MODFET) technology is provided. The layer structures and mobility enhancements for both p- and n-channel modulation-doped quantum wells are described and compared to mobilities in Si/SiO 2 inversion layers. Next, previous results on high-performance n- and p-MODFETs fabricated at IBM and elsewhere are reviewed, followed by recent results on laterally-scaled Si/SiGe n-MODFETs with gate lengths as small as 70 nm. We conclude with a discussion of the materials issues for the future vertical and lateral scaling of SiGe MODFETs.

Original languageEnglish (US)
Pages (from-to)171-179
Number of pages9
JournalMaterials Research Society Symposium Proceedings
Volume809
StatePublished - Dec 1 2004
EventHigh-Mobility Group-IV Materials and Devices - San Francisco, CA, United States
Duration: Apr 13 2004Apr 15 2004

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