High-Performance Dual-Gated Single-Layer WS₂MOSFETs With Bi Contacts

The demonstration of high drive current in chemical vapor deposition (CVD)-grown single-layer (1L) WS2 metal-oxide-semiconductor field-effect transistors (MOSFETs) is reported. The best device with gate length, int L G, of 0.32 μ m displayed ON/OFF ratio as high as 1010 and saturated drain current, I D(SAT), of 245 μ Aμ m (340 μ A μ m) at room temperature (78 K). This device had L G × I D(SAT) = 78 μ A, providing strong evidence of the potential of CVD-grown WS2 for realizing high-performance transistors.