High-Performance Dual-Gated Single-Layer WS2MOSFETs With Bi Contacts

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3 Scopus citations

Abstract

The demonstration of high drive current in chemical vapor deposition (CVD)-grown single-layer (1L) WS2 metal-oxide-semiconductor field-effect transistors (MOSFETs) is reported. The best device with gate length, int L G, of 0.32 μ m displayed ON/OFF ratio as high as 1010 and saturated drain current, I D(SAT), of 245 μ Aμ m (340 μ A μ m) at room temperature (78 K). This device had L G × I D(SAT) = 78 μ A, providing strong evidence of the potential of CVD-grown WS2 for realizing high-performance transistors.

Original languageEnglish (US)
Pages (from-to)639-642
Number of pages4
JournalIEEE Electron Device Letters
Volume43
Issue number4
DOIs
StatePublished - Apr 1 2022

Bibliographical note

Publisher Copyright:
IEEE

Keywords

  • chemical vapor deposition
  • Dielectrics
  • Hysteresis
  • Logic gates
  • monolayer
  • MOSFET
  • Performance evaluation
  • Temperature measurement
  • transition-metal dichalcogenide
  • Voltage measurement
  • WS2

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