High-Performance Depletion/Enhancement-ode \beta -Ga2O3 on Insulator (GOOI) Field-Effect Transistors with Record Drain Currents of 600/450 mA/mm

In this letter, we report on high-performance depletion/enhancement-mode ß-Ga2O3 on insulator (GOOI) field-effect transistors (FETs) with record high drain currents (ID) of 600/450mA/mm, which are nearly one order of magnitude higher than any other reported ID values. The threshold voltage (VT) can be modulated by varying the thickness of the ß-Ga2O3 films and the E-mode GOOI FET can be simply achieved by shrinking the ß-Ga2O3 film thickness. Benefiting from the good interface between ß-Ga2O3 and SiO2 and wide bandgap of ß-Ga2O3, a negligible transfer characteristic hysteresis, high ID ON/OFF ratio of 1010, and low subthreshold swing of 140mV/decade for a 300-nm-thick SiO2 are observed. E-mode GOOI FET with source to drain spacing of 0.9-μm demonstrates a breakdown voltage of 185 V and an average electric field (E) of 2 MV/cm, showing the great promise of GOOI FET for future power devices.