Results for planar, self-aligned gate, complementary, pseudomorphic GaAs-InGaAs-AlGaAs HIGFET devices are presented. The gate leakage is found to be controllable by increasing the AlAs molar fraction in the barrier layer. A planar n-doped layer beneath the InGaAs channel is shown to shift the threshold voltages of the devices and to reduce considerably the output conductance of the p-channel FET. The operation of complementary inverters depends sensitively on the relative values of supply voltage and gate turn-on voltages. Large inverter noise margins are demonstrated, and the power and speed of complementary ring oscillators are discussed.
|Original language||English (US)|
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - Dec 1 1989|
|Event||1989 International Electron Devices Meeting - Technical Digest - Washington, DC, USA|
Duration: Dec 3 1989 → Dec 6 1989