High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering

Nazila Haratipour, Seon Namgung, Roberto Grassi, Tony Low, Sang Hyun Oh, Steven J. Koester

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report high performance, orientation-controlled, and locally back-gated black phosphorus (BP) n-MOSFETs and p-MOSFETs with titanium and permalloy contacts, respectively. Devices with channel length ranging from 0.3 to 0.7μm are analyzed. Armchair-oriented BP p-MOSFETs (n-MOSFETs) display 3.5 times (1.5 times) higher maximum current compared with zigzag devices. Saturated transconductance values up to 4.8 times (1.6 times) higher for BP p-MOSFETs (n-MOSFETs) oriented along the armchair direction compared with the zigzag direction are observed. Using this orientation control and contact engineering, n-MOSFETs with transconductance of 110μ Sμ m and p-MOSFETs with contact resistance as low as 0.31 kμ m are demonstrated.

Original languageEnglish (US)
Article number7873224
Pages (from-to)685-688
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number5
DOIs
StatePublished - May 1 2017

Fingerprint

Crystal orientation
Phosphorus
Transconductance
Contact resistance
Titanium
Display devices
Direction compound

Keywords

  • 2D materials
  • black phosphorus
  • crystal orientation
  • MOSFETs

How much support was provided by MRSEC?

  • Primary

Reporting period for MRSEC

  • Period 3

Cite this

High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering. / Haratipour, Nazila; Namgung, Seon; Grassi, Roberto; Low, Tony; Oh, Sang Hyun; Koester, Steven J.

In: IEEE Electron Device Letters, Vol. 38, No. 5, 7873224, 01.05.2017, p. 685-688.

Research output: Contribution to journalArticle

@article{4a2ebfffc19a47afabaaed3e4ce761a0,
title = "High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering",
abstract = "We report high performance, orientation-controlled, and locally back-gated black phosphorus (BP) n-MOSFETs and p-MOSFETs with titanium and permalloy contacts, respectively. Devices with channel length ranging from 0.3 to 0.7μm are analyzed. Armchair-oriented BP p-MOSFETs (n-MOSFETs) display 3.5 times (1.5 times) higher maximum current compared with zigzag devices. Saturated transconductance values up to 4.8 times (1.6 times) higher for BP p-MOSFETs (n-MOSFETs) oriented along the armchair direction compared with the zigzag direction are observed. Using this orientation control and contact engineering, n-MOSFETs with transconductance of 110μ Sμ m and p-MOSFETs with contact resistance as low as 0.31 kμ m are demonstrated.",
keywords = "2D materials, black phosphorus, crystal orientation, MOSFETs",
author = "Nazila Haratipour and Seon Namgung and Roberto Grassi and Tony Low and Oh, {Sang Hyun} and Koester, {Steven J.}",
year = "2017",
month = "5",
day = "1",
doi = "10.1109/LED.2017.2679117",
language = "English (US)",
volume = "38",
pages = "685--688",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",

}

TY - JOUR

T1 - High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering

AU - Haratipour, Nazila

AU - Namgung, Seon

AU - Grassi, Roberto

AU - Low, Tony

AU - Oh, Sang Hyun

AU - Koester, Steven J.

PY - 2017/5/1

Y1 - 2017/5/1

N2 - We report high performance, orientation-controlled, and locally back-gated black phosphorus (BP) n-MOSFETs and p-MOSFETs with titanium and permalloy contacts, respectively. Devices with channel length ranging from 0.3 to 0.7μm are analyzed. Armchair-oriented BP p-MOSFETs (n-MOSFETs) display 3.5 times (1.5 times) higher maximum current compared with zigzag devices. Saturated transconductance values up to 4.8 times (1.6 times) higher for BP p-MOSFETs (n-MOSFETs) oriented along the armchair direction compared with the zigzag direction are observed. Using this orientation control and contact engineering, n-MOSFETs with transconductance of 110μ Sμ m and p-MOSFETs with contact resistance as low as 0.31 kμ m are demonstrated.

AB - We report high performance, orientation-controlled, and locally back-gated black phosphorus (BP) n-MOSFETs and p-MOSFETs with titanium and permalloy contacts, respectively. Devices with channel length ranging from 0.3 to 0.7μm are analyzed. Armchair-oriented BP p-MOSFETs (n-MOSFETs) display 3.5 times (1.5 times) higher maximum current compared with zigzag devices. Saturated transconductance values up to 4.8 times (1.6 times) higher for BP p-MOSFETs (n-MOSFETs) oriented along the armchair direction compared with the zigzag direction are observed. Using this orientation control and contact engineering, n-MOSFETs with transconductance of 110μ Sμ m and p-MOSFETs with contact resistance as low as 0.31 kμ m are demonstrated.

KW - 2D materials

KW - black phosphorus

KW - crystal orientation

KW - MOSFETs

UR - http://www.scopus.com/inward/record.url?scp=85019184224&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85019184224&partnerID=8YFLogxK

U2 - 10.1109/LED.2017.2679117

DO - 10.1109/LED.2017.2679117

M3 - Article

VL - 38

SP - 685

EP - 688

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 5

M1 - 7873224

ER -