Abstract
We report high performance, orientation-controlled, and locally back-gated black phosphorus (BP) n-MOSFETs and p-MOSFETs with titanium and permalloy contacts, respectively. Devices with channel length ranging from 0.3 to 0.7μm are analyzed. Armchair-oriented BP p-MOSFETs (n-MOSFETs) display 3.5 times (1.5 times) higher maximum current compared with zigzag devices. Saturated transconductance values up to 4.8 times (1.6 times) higher for BP p-MOSFETs (n-MOSFETs) oriented along the armchair direction compared with the zigzag direction are observed. Using this orientation control and contact engineering, n-MOSFETs with transconductance of 110μ Sμ m and p-MOSFETs with contact resistance as low as 0.31 kμ m are demonstrated.
| Original language | English (US) |
|---|---|
| Article number | 7873224 |
| Pages (from-to) | 685-688 |
| Number of pages | 4 |
| Journal | IEEE Electron Device Letters |
| Volume | 38 |
| Issue number | 5 |
| DOIs | |
| State | Published - May 1 2017 |
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Keywords
- 2D materials
- black phosphorus
- crystal orientation
- MOSFETs
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High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering. / Haratipour, Nazila; Namgung, Seon; Grassi, Roberto; Low, Tony; Oh, Sang Hyun; Koester, Steven J.
In: IEEE Electron Device Letters, Vol. 38, No. 5, 7873224, 01.05.2017, p. 685-688.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering
AU - Haratipour, Nazila
AU - Namgung, Seon
AU - Grassi, Roberto
AU - Low, Tony
AU - Oh, Sang Hyun
AU - Koester, Steven J.
PY - 2017/5/1
Y1 - 2017/5/1
N2 - We report high performance, orientation-controlled, and locally back-gated black phosphorus (BP) n-MOSFETs and p-MOSFETs with titanium and permalloy contacts, respectively. Devices with channel length ranging from 0.3 to 0.7μm are analyzed. Armchair-oriented BP p-MOSFETs (n-MOSFETs) display 3.5 times (1.5 times) higher maximum current compared with zigzag devices. Saturated transconductance values up to 4.8 times (1.6 times) higher for BP p-MOSFETs (n-MOSFETs) oriented along the armchair direction compared with the zigzag direction are observed. Using this orientation control and contact engineering, n-MOSFETs with transconductance of 110μ Sμ m and p-MOSFETs with contact resistance as low as 0.31 kμ m are demonstrated.
AB - We report high performance, orientation-controlled, and locally back-gated black phosphorus (BP) n-MOSFETs and p-MOSFETs with titanium and permalloy contacts, respectively. Devices with channel length ranging from 0.3 to 0.7μm are analyzed. Armchair-oriented BP p-MOSFETs (n-MOSFETs) display 3.5 times (1.5 times) higher maximum current compared with zigzag devices. Saturated transconductance values up to 4.8 times (1.6 times) higher for BP p-MOSFETs (n-MOSFETs) oriented along the armchair direction compared with the zigzag direction are observed. Using this orientation control and contact engineering, n-MOSFETs with transconductance of 110μ Sμ m and p-MOSFETs with contact resistance as low as 0.31 kμ m are demonstrated.
KW - 2D materials
KW - black phosphorus
KW - crystal orientation
KW - MOSFETs
UR - http://www.scopus.com/inward/record.url?scp=85019184224&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85019184224&partnerID=8YFLogxK
U2 - 10.1109/LED.2017.2679117
DO - 10.1109/LED.2017.2679117
M3 - Article
AN - SCOPUS:85019184224
VL - 38
SP - 685
EP - 688
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 5
M1 - 7873224
ER -