High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering

Nazila Haratipour; Seon Namgung; Roberto Grassi; Tony Low; Sang Hyun Oh; Steven J. Koester

doi:10.1109/LED.2017.2679117

High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering

Nazila Haratipour, Seon Namgung, Roberto Grassi, Tony Low, Sang Hyun Oh, Steven J. Koester

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

We report high performance, orientation-controlled, and locally back-gated black phosphorus (BP) n-MOSFETs and p-MOSFETs with titanium and permalloy contacts, respectively. Devices with channel length ranging from 0.3 to 0.7μm are analyzed. Armchair-oriented BP p-MOSFETs (n-MOSFETs) display 3.5 times (1.5 times) higher maximum current compared with zigzag devices. Saturated transconductance values up to 4.8 times (1.6 times) higher for BP p-MOSFETs (n-MOSFETs) oriented along the armchair direction compared with the zigzag direction are observed. Using this orientation control and contact engineering, n-MOSFETs with transconductance of 110μ Sμ m and p-MOSFETs with contact resistance as low as 0.31 kμ m are demonstrated.

Original language	English (US)
Article number	7873224
Pages (from-to)	685-688
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	38
Issue number	5
DOIs	https://doi.org/10.1109/LED.2017.2679117
State	Published - May 2017

Bibliographical note

Funding Information:
This work was supported by the National Science Foundation (NSF) through the University of Minnesota MRSEC under Award Number DMR-1420013.

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

2D materials
black phosphorus
crystal orientation
MOSFETs

MRSEC Support

Primary

Publisher link

10.1109/LED.2017.2679117

Find It

Find It at U of M Libraries

Cite this

@article{4a2ebfffc19a47afabaaed3e4ce761a0,

title = "High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering",

abstract = "We report high performance, orientation-controlled, and locally back-gated black phosphorus (BP) n-MOSFETs and p-MOSFETs with titanium and permalloy contacts, respectively. Devices with channel length ranging from 0.3 to 0.7μm are analyzed. Armchair-oriented BP p-MOSFETs (n-MOSFETs) display 3.5 times (1.5 times) higher maximum current compared with zigzag devices. Saturated transconductance values up to 4.8 times (1.6 times) higher for BP p-MOSFETs (n-MOSFETs) oriented along the armchair direction compared with the zigzag direction are observed. Using this orientation control and contact engineering, n-MOSFETs with transconductance of 110μ Sμ m and p-MOSFETs with contact resistance as low as 0.31 kμ m are demonstrated.",

keywords = "2D materials, black phosphorus, crystal orientation, MOSFETs",

author = "Nazila Haratipour and Seon Namgung and Roberto Grassi and Tony Low and Oh, {Sang Hyun} and Koester, {Steven J.}",

note = "Funding Information: This work was supported by the National Science Foundation (NSF) through the University of Minnesota MRSEC under Award Number DMR-1420013. Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2017",

month = may,

doi = "10.1109/LED.2017.2679117",

language = "English (US)",

volume = "38",

pages = "685--688",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering

AU - Haratipour, Nazila

AU - Namgung, Seon

AU - Grassi, Roberto

AU - Low, Tony

AU - Oh, Sang Hyun

AU - Koester, Steven J.

N1 - Funding Information: This work was supported by the National Science Foundation (NSF) through the University of Minnesota MRSEC under Award Number DMR-1420013. Publisher Copyright: © 1980-2012 IEEE.

PY - 2017/5

Y1 - 2017/5

N2 - We report high performance, orientation-controlled, and locally back-gated black phosphorus (BP) n-MOSFETs and p-MOSFETs with titanium and permalloy contacts, respectively. Devices with channel length ranging from 0.3 to 0.7μm are analyzed. Armchair-oriented BP p-MOSFETs (n-MOSFETs) display 3.5 times (1.5 times) higher maximum current compared with zigzag devices. Saturated transconductance values up to 4.8 times (1.6 times) higher for BP p-MOSFETs (n-MOSFETs) oriented along the armchair direction compared with the zigzag direction are observed. Using this orientation control and contact engineering, n-MOSFETs with transconductance of 110μ Sμ m and p-MOSFETs with contact resistance as low as 0.31 kμ m are demonstrated.

AB - We report high performance, orientation-controlled, and locally back-gated black phosphorus (BP) n-MOSFETs and p-MOSFETs with titanium and permalloy contacts, respectively. Devices with channel length ranging from 0.3 to 0.7μm are analyzed. Armchair-oriented BP p-MOSFETs (n-MOSFETs) display 3.5 times (1.5 times) higher maximum current compared with zigzag devices. Saturated transconductance values up to 4.8 times (1.6 times) higher for BP p-MOSFETs (n-MOSFETs) oriented along the armchair direction compared with the zigzag direction are observed. Using this orientation control and contact engineering, n-MOSFETs with transconductance of 110μ Sμ m and p-MOSFETs with contact resistance as low as 0.31 kμ m are demonstrated.

KW - 2D materials

KW - black phosphorus

KW - crystal orientation

KW - MOSFETs

UR - http://www.scopus.com/inward/record.url?scp=85019184224&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85019184224&partnerID=8YFLogxK

U2 - 10.1109/LED.2017.2679117

DO - 10.1109/LED.2017.2679117

M3 - Article

AN - SCOPUS:85019184224

SN - 0741-3106

VL - 38

SP - 685

EP - 688

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

M1 - 7873224

ER -

High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering

Abstract

Bibliographical note

Keywords

MRSEC Support

Publisher link

Find It

Other files and links

Fingerprint

MRSEC SEED Projects DMR-1420013

MRSEC IRG-1: Electrostatic Control of Materials

University of Minnesota MRSEC (DMR-1420013)

Cite this