High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering

Nazila Haratipour; Seon Namgung; Roberto Grassi; Tony Low; Sang Hyun Oh; Steven J. Koester

doi:10.1109/LED.2017.2679117

High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering

Nazila Haratipour, Seon Namgung, Roberto Grassi, Tony Low, Sang Hyun Oh, Steven J. Koester

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We report high performance, orientation-controlled, and locally back-gated black phosphorus (BP) n-MOSFETs and p-MOSFETs with titanium and permalloy contacts, respectively. Devices with channel length ranging from 0.3 to 0.7μm are analyzed. Armchair-oriented BP p-MOSFETs (n-MOSFETs) display 3.5 times (1.5 times) higher maximum current compared with zigzag devices. Saturated transconductance values up to 4.8 times (1.6 times) higher for BP p-MOSFETs (n-MOSFETs) oriented along the armchair direction compared with the zigzag direction are observed. Using this orientation control and contact engineering, n-MOSFETs with transconductance of 110μ Sμ m and p-MOSFETs with contact resistance as low as 0.31 kμ m are demonstrated.

Original language	English (US)
Article number	7873224
Pages (from-to)	685-688
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	38
Issue number	5
DOIs	https://doi.org/10.1109/LED.2017.2679117
State	Published - May 2017

Bibliographical note

Funding Information:
This work was supported by the National Science Foundation (NSF) through the University of Minnesota MRSEC under Award Number DMR-1420013.

Keywords

2D materials
black phosphorus
crystal orientation
MOSFETs

How much support was provided by MRSEC?

Primary

Reporting period for MRSEC

Period 3

Access

10.1109/LED.2017.2679117

Fingerprint Dive into the research topics of 'High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering'. Together they form a unique fingerprint.

1 Finished
2 Active

MRSEC SEED Projects
11/1/14 → …
Project: Research project
MRSEC IRG-1: Electrostatic Control of Materials
Leighton, C., Birol, T., Fernandes, R. M., Frisbie, D., Goldman, A. M., Greven, M., Jalan, B., Koester, S. J., He, T., Jeong, J. S., Koirala, S., Paul, A., Thoutam, L. R. & Yu, G.
9/1/98 → …
Project: Research project
University of Minnesota MRSEC (DMR-1420013)
Lodge, T.
11/1/14 → 10/31/20
Project: Research project

Cite this

@article{4a2ebfffc19a47afabaaed3e4ce761a0,

title = "High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering",

abstract = "We report high performance, orientation-controlled, and locally back-gated black phosphorus (BP) n-MOSFETs and p-MOSFETs with titanium and permalloy contacts, respectively. Devices with channel length ranging from 0.3 to 0.7μm are analyzed. Armchair-oriented BP p-MOSFETs (n-MOSFETs) display 3.5 times (1.5 times) higher maximum current compared with zigzag devices. Saturated transconductance values up to 4.8 times (1.6 times) higher for BP p-MOSFETs (n-MOSFETs) oriented along the armchair direction compared with the zigzag direction are observed. Using this orientation control and contact engineering, n-MOSFETs with transconductance of 110μ Sμ m and p-MOSFETs with contact resistance as low as 0.31 kμ m are demonstrated.",

keywords = "2D materials, black phosphorus, crystal orientation, MOSFETs",

author = "Nazila Haratipour and Seon Namgung and Roberto Grassi and Tony Low and Oh, {Sang Hyun} and Koester, {Steven J.}",

note = "Funding Information: This work was supported by the National Science Foundation (NSF) through the University of Minnesota MRSEC under Award Number DMR-1420013.",

year = "2017",

month = may,

doi = "10.1109/LED.2017.2679117",

language = "English (US)",

volume = "38",

pages = "685--688",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering

AU - Haratipour, Nazila

AU - Namgung, Seon

AU - Grassi, Roberto

AU - Low, Tony

AU - Oh, Sang Hyun

AU - Koester, Steven J.

N1 - Funding Information: This work was supported by the National Science Foundation (NSF) through the University of Minnesota MRSEC under Award Number DMR-1420013.

PY - 2017/5

Y1 - 2017/5

N2 - We report high performance, orientation-controlled, and locally back-gated black phosphorus (BP) n-MOSFETs and p-MOSFETs with titanium and permalloy contacts, respectively. Devices with channel length ranging from 0.3 to 0.7μm are analyzed. Armchair-oriented BP p-MOSFETs (n-MOSFETs) display 3.5 times (1.5 times) higher maximum current compared with zigzag devices. Saturated transconductance values up to 4.8 times (1.6 times) higher for BP p-MOSFETs (n-MOSFETs) oriented along the armchair direction compared with the zigzag direction are observed. Using this orientation control and contact engineering, n-MOSFETs with transconductance of 110μ Sμ m and p-MOSFETs with contact resistance as low as 0.31 kμ m are demonstrated.

AB - We report high performance, orientation-controlled, and locally back-gated black phosphorus (BP) n-MOSFETs and p-MOSFETs with titanium and permalloy contacts, respectively. Devices with channel length ranging from 0.3 to 0.7μm are analyzed. Armchair-oriented BP p-MOSFETs (n-MOSFETs) display 3.5 times (1.5 times) higher maximum current compared with zigzag devices. Saturated transconductance values up to 4.8 times (1.6 times) higher for BP p-MOSFETs (n-MOSFETs) oriented along the armchair direction compared with the zigzag direction are observed. Using this orientation control and contact engineering, n-MOSFETs with transconductance of 110μ Sμ m and p-MOSFETs with contact resistance as low as 0.31 kμ m are demonstrated.

KW - 2D materials

KW - black phosphorus

KW - crystal orientation

KW - MOSFETs

UR - http://www.scopus.com/inward/record.url?scp=85019184224&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85019184224&partnerID=8YFLogxK

U2 - 10.1109/LED.2017.2679117

DO - 10.1109/LED.2017.2679117

M3 - Article

AN - SCOPUS:85019184224

VL - 38

SP - 685

EP - 688

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 5

M1 - 7873224

ER -

High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering

Abstract

Bibliographical note

Keywords

How much support was provided by MRSEC?

Reporting period for MRSEC

Access

MRSEC SEED Projects

MRSEC IRG-1: Electrostatic Control of Materials

University of Minnesota MRSEC (DMR-1420013)

Cite this