Projects per year
Abstract
We report high performance, orientation-controlled, and locally back-gated black phosphorus (BP) n-MOSFETs and p-MOSFETs with titanium and permalloy contacts, respectively. Devices with channel length ranging from 0.3 to 0.7μm are analyzed. Armchair-oriented BP p-MOSFETs (n-MOSFETs) display 3.5 times (1.5 times) higher maximum current compared with zigzag devices. Saturated transconductance values up to 4.8 times (1.6 times) higher for BP p-MOSFETs (n-MOSFETs) oriented along the armchair direction compared with the zigzag direction are observed. Using this orientation control and contact engineering, n-MOSFETs with transconductance of 110μ Sμ m and p-MOSFETs with contact resistance as low as 0.31 kμ m are demonstrated.
Original language | English (US) |
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Article number | 7873224 |
Pages (from-to) | 685-688 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 38 |
Issue number | 5 |
DOIs | |
State | Published - May 2017 |
Bibliographical note
Funding Information:This work was supported by the National Science Foundation (NSF) through the University of Minnesota MRSEC under Award Number DMR-1420013.
Publisher Copyright:
© 1980-2012 IEEE.
Keywords
- 2D materials
- black phosphorus
- crystal orientation
- MOSFETs
MRSEC Support
- Primary
Fingerprint
Dive into the research topics of 'High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering'. Together they form a unique fingerprint.Projects
- 3 Finished
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MRSEC IRG-1: Electrostatic Control of Materials
Leighton, C., Birol, T., Fernandes, R. M., Frisbie, D., Goldman, A. M., Greven, M., Jalan, B., Koester, S. J., He, T., Jeong, J. S., Koirala, S., Paul, A., Thoutam, L. R. & Yu, G.
11/1/14 → 10/31/20
Project: Research project
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