High mobility top-gated pentacene thin-film transistors

Christopher R. Newman, Reid J. Chesterfield, Matthew J. Panzer, C. Daniel Frisbie

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A common device geometry for measuring the electrical characteristics of organic semiconductors is the thin-film organic field-effect transistor (OTFT). Mostly for reasons of cost, convenience, and availability, this usually involves depositing the organic material on a prefabricated gate structure such as SiSi O2, the surface chemistry of which is often modified with self-assembled monolayers. The interactions between these surfaces and the deposited organic can have a profound effect on thin-film growth and the resulting electrical characteristics since most of the charge transport in these structures occurs near the organic-insulator interface. An alternative to this traditional technique is to assemble the transistor on top of the organic semiconductor. We have used chemical-vapor deposition of the polymeric dielectric material parylene to create pentacene OTFTs with gate electrodes both on top of and below the semiconductor film, with field-effect mobilities as high as 0.1 cm2 V s and Ion Ioff ratios greater than 106 in the top-gated OTFTs. Comparing the electronic properties of top- and bottom-gate structures yields insight into the charge transport characteristics as well as the effects of device geometry, contacts, and surface roughness of the organic thin film.

Original languageEnglish (US)
Article number084506
JournalJournal of Applied Physics
Issue number8
StatePublished - Oct 15 2005

Bibliographical note

Funding Information:
One of the authors (C.R.N.) thanks the U.S. Army Research Office for a NDSEG Fellowship. Another author (M.J.P) thanks the NSF for support provided through a graduate research fellowship. This work was supported primarily by the MRSEC Program of the National Science Foundation under DMR-0212302. The authors thank Paul V. Pesavento, Jeffrey A. Merlo, and Sandra E. Fritz for useful discussions.


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