We demonstrate nanocrystalline silicon (nc-Si) top-gate thin-film transistors (TFTs) on optically clear, flexible plastic foil substrates. The silicon layers were deposited by plasma-enhanced chemical vapor deposition at a substrate temperature of 150°C. The n-channel nc-Si TFTs have saturation electron mobilities of 18 cm2V-1s-1 and transconductances of 0.22 μSμ-1. With a channel width to length ratio of 2, these TFTs deliver up to 0.1 mA to bottom emitting electrophosphorescent organic light-emitting devices (OLEDs) which were fabricated on a separate glass substrate. These results suggest that high-current, small-area OLED driver TFTs can be made by a low-temperature process, compatible with flexible clear plastic substrates.
|Original language||English (US)|
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - Jan 2006|
Bibliographical noteFunding Information:
Manuscript received September 12, 2005; revised October 18, 2005. This work was supported in part by the New Jersey Commission on Science and Technology and the Universal Display Corporation, and in part by a Princeton Program in Plasma Science and Technology Graduate Fellowship. The review of this letter was arranged by Editor J. Sin.
- Clear plastic (CP) foil
- Flexible substrate
- Nanocrystalline silicon (nc-Si)
- Organic light emitting device (OLED)
- Thin-film transistor (TFT)