High mobility nanocrystalline silicon transistors on clear plastic substrates

Alex Z. Kattamis, Russell J. Holmes, I. Chun Cheng, Ke Long, James C. Sturm, Stephen R. Forrest, Sigurd Wagner

Research output: Contribution to journalArticlepeer-review

35 Scopus citations


We demonstrate nanocrystalline silicon (nc-Si) top-gate thin-film transistors (TFTs) on optically clear, flexible plastic foil substrates. The silicon layers were deposited by plasma-enhanced chemical vapor deposition at a substrate temperature of 150°C. The n-channel nc-Si TFTs have saturation electron mobilities of 18 cm2V-1s-1 and transconductances of 0.22 μSμ-1. With a channel width to length ratio of 2, these TFTs deliver up to 0.1 mA to bottom emitting electrophosphorescent organic light-emitting devices (OLEDs) which were fabricated on a separate glass substrate. These results suggest that high-current, small-area OLED driver TFTs can be made by a low-temperature process, compatible with flexible clear plastic substrates.

Original languageEnglish (US)
Pages (from-to)49-51
Number of pages3
JournalIEEE Electron Device Letters
Issue number1
StatePublished - Jan 2006

Bibliographical note

Funding Information:
Manuscript received September 12, 2005; revised October 18, 2005. This work was supported in part by the New Jersey Commission on Science and Technology and the Universal Display Corporation, and in part by a Princeton Program in Plasma Science and Technology Graduate Fellowship. The review of this letter was arranged by Editor J. Sin.


  • Clear plastic (CP) foil
  • Electrophosphorescence
  • Flexible substrate
  • Nanocrystalline silicon (nc-Si)
  • Organic light emitting device (OLED)
  • Thin-film transistor (TFT)


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