High mobility III-V channel MOSFETs for post-Si CMOS applications

Yanning Sun, E. W. Kiewra, J. P. De Souza, S. J. Koester, J. J. Bucchignano, N. Ruiz, K. E. Fogel, D. K. Sadana, G. G. Shahidi, J. Fompeyrine, D. J. Webb, M. Sousa, C. Marchiori, R. Germann, K. T. Shiu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

III-V compound semiconductors have received renewed attention as the channel materials for future generation CMOS technology. High performance long-channel GaAs MOSFETs and short-channel InGaAs MOSFETs are demonstrated. High current of 960 μA/μm and transconductance of 793 μS/μm have been achieved. Scaling behavior has been investigated experimentally down to 80 nm for the first time in III-V MOSFETs. Good scaling behavior is observed for on-state current, transconductance, as well as the virtual source velocity.

Original languageEnglish (US)
Title of host publication2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009
Pages161-164
Number of pages4
DOIs
StatePublished - Dec 1 2009
Event2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009 - Austin, TX, United States
Duration: May 18 2009May 20 2009

Publication series

Name2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009

Other

Other2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009
CountryUnited States
CityAustin, TX
Period5/18/095/20/09

Keywords

  • CMOS
  • III-V
  • InGaAs short-channel MOSFET
  • Scaling

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    Sun, Y., Kiewra, E. W., De Souza, J. P., Koester, S. J., Bucchignano, J. J., Ruiz, N., Fogel, K. E., Sadana, D. K., Shahidi, G. G., Fompeyrine, J., Webb, D. J., Sousa, M., Marchiori, C., Germann, R., & Shiu, K. T. (2009). High mobility III-V channel MOSFETs for post-Si CMOS applications. In 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009 (pp. 161-164). [5166286] (2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009). https://doi.org/10.1109/ICICDT.2009.5166286