High mobility HfO2 n- and p-channel transistors

S. A. Campbell; T. Z. Ma; R. Smith; W. L. Gladfelter; F. Chen

doi:10.1016/S0167-9317(01)00669-4

High mobility HfO₂ n- and p-channel transistors

S. A. Campbell, T. Z. Ma, R. Smith, W. L. Gladfelter, F. Chen

Research output: Contribution to journal › Conference article › peer-review

47 Scopus citations

Abstract

High permittivity HfO₂ films have been deposited directly on silicon using the thermal decomposition of the hafnium nitrato precursor Hf(NO₃)₄. These films were then used to build n- and p-channel field effect transistors. N+ poly, P+ poly, and Pt have been used as gate electrodes. The mobility of the poly gate devices is comparable to that of SiO₂/Si, however, these devices show a thicker equivalent oxide thickness than the Pt devices. The effect of the composition of the films on their electrical performance is discussed.

Original language	English (US)
Pages (from-to)	361-365
Number of pages	5
Journal	Microelectronic Engineering
Volume	59
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(01)00669-4
State	Published - Nov 2001
Event	12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001) - Udine, Italy Duration: Jun 20 2001 → Jun 23 2001

Bibliographical note

Funding Information:
The authors wish to acknowledge Motorola, who supported this work through the Semiconductor Research Corporation Research Customization Program (contract 731).

Keywords

Gate insulator
High permittivity
MOSFET
Mobility

Publisher link

10.1016/S0167-9317(01)00669-4

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title = "High mobility HfO2 n- and p-channel transistors",

abstract = "High permittivity HfO2 films have been deposited directly on silicon using the thermal decomposition of the hafnium nitrato precursor Hf(NO3)4. These films were then used to build n- and p-channel field effect transistors. N+ poly, P+ poly, and Pt have been used as gate electrodes. The mobility of the poly gate devices is comparable to that of SiO2/Si, however, these devices show a thicker equivalent oxide thickness than the Pt devices. The effect of the composition of the films on their electrical performance is discussed.",

keywords = "Gate insulator, High permittivity, MOSFET, Mobility",

author = "Campbell, {S. A.} and Ma, {T. Z.} and R. Smith and Gladfelter, {W. L.} and F. Chen",

note = "Funding Information: The authors wish to acknowledge Motorola, who supported this work through the Semiconductor Research Corporation Research Customization Program (contract 731).; 12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001) ; Conference date: 20-06-2001 Through 23-06-2001",

year = "2001",

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T1 - High mobility HfO2 n- and p-channel transistors

AU - Campbell, S. A.

AU - Ma, T. Z.

AU - Smith, R.

AU - Gladfelter, W. L.

AU - Chen, F.

N1 - Funding Information: The authors wish to acknowledge Motorola, who supported this work through the Semiconductor Research Corporation Research Customization Program (contract 731).

PY - 2001/11

Y1 - 2001/11

N2 - High permittivity HfO2 films have been deposited directly on silicon using the thermal decomposition of the hafnium nitrato precursor Hf(NO3)4. These films were then used to build n- and p-channel field effect transistors. N+ poly, P+ poly, and Pt have been used as gate electrodes. The mobility of the poly gate devices is comparable to that of SiO2/Si, however, these devices show a thicker equivalent oxide thickness than the Pt devices. The effect of the composition of the films on their electrical performance is discussed.

AB - High permittivity HfO2 films have been deposited directly on silicon using the thermal decomposition of the hafnium nitrato precursor Hf(NO3)4. These films were then used to build n- and p-channel field effect transistors. N+ poly, P+ poly, and Pt have been used as gate electrodes. The mobility of the poly gate devices is comparable to that of SiO2/Si, however, these devices show a thicker equivalent oxide thickness than the Pt devices. The effect of the composition of the films on their electrical performance is discussed.

KW - Gate insulator

KW - High permittivity

KW - MOSFET

KW - Mobility

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