High mobility channels for ultimate CMOS

D. K. Sadana; S. J. Koester; Y. Sun; E. W. Kiewra; S. W. Bedell; A. Reznicek; J. A. Ott; K. Fogel; D. J. Webb; J. Fompeyrine; J. P. Locquet; M. Sousa; R. Germann

doi:10.1149/1.2356294

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Integration of Ge as the p-FET channel material for 22 nm and beyond technology nodes is receiving increasing attention. Furthermore, there is a growing consensus in the CMOS industry that III-Vs channels for n-FETs should be closely evaluated. This review examines choices for Ge integration with Si, and describes recent results from III-V channels with a high-k/metal gate stack. copyright The Electrochemical Society.

Original language	English (US)
Pages (from-to)	343-354
Number of pages	12
Journal	ECS Transactions
Volume	3
Issue number	2
DOIs	https://doi.org/10.1149/1.2356294
State	Published - Dec 1 2006
Event	Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: Oct 29 2006 → Nov 3 2006

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title = "High mobility channels for ultimate CMOS",

abstract = "Integration of Ge as the p-FET channel material for 22 nm and beyond technology nodes is receiving increasing attention. Furthermore, there is a growing consensus in the CMOS industry that III-Vs channels for n-FETs should be closely evaluated. This review examines choices for Ge integration with Si, and describes recent results from III-V channels with a high-k/metal gate stack. copyright The Electrochemical Society.",

author = "Sadana, \{D. K.\} and Koester, \{S. J.\} and Y. Sun and Kiewra, \{E. W.\} and Bedell, \{S. W.\} and A. Reznicek and Ott, \{J. A.\} and K. Fogel and Webb, \{D. J.\} and J. Fompeyrine and Locquet, \{J. P.\} and M. Sousa and R. Germann",

year = "2006",

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doi = "10.1149/1.2356294",

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TY - JOUR

T1 - High mobility channels for ultimate CMOS

AU - Sadana, D. K.

AU - Koester, S. J.

AU - Sun, Y.

AU - Kiewra, E. W.

AU - Bedell, S. W.

AU - Reznicek, A.

AU - Ott, J. A.

AU - Fogel, K.

AU - Webb, D. J.

AU - Fompeyrine, J.

AU - Locquet, J. P.

AU - Sousa, M.

AU - Germann, R.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Integration of Ge as the p-FET channel material for 22 nm and beyond technology nodes is receiving increasing attention. Furthermore, there is a growing consensus in the CMOS industry that III-Vs channels for n-FETs should be closely evaluated. This review examines choices for Ge integration with Si, and describes recent results from III-V channels with a high-k/metal gate stack. copyright The Electrochemical Society.

AB - Integration of Ge as the p-FET channel material for 22 nm and beyond technology nodes is receiving increasing attention. Furthermore, there is a growing consensus in the CMOS industry that III-Vs channels for n-FETs should be closely evaluated. This review examines choices for Ge integration with Si, and describes recent results from III-V channels with a high-k/metal gate stack. copyright The Electrochemical Society.

UR - https://www.scopus.com/pages/publications/33846993453

UR - https://www.scopus.com/pages/publications/33846993453#tab=citedBy

U2 - 10.1149/1.2356294

DO - 10.1149/1.2356294

M3 - Conference article

AN - SCOPUS:33846993453

SN - 1938-5862

VL - 3

SP - 343

EP - 354

JO - ECS Transactions

JF - ECS Transactions

IS - 2

T2 - Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting

Y2 - 29 October 2006 through 3 November 2006

ER -

High mobility channels for ultimate CMOS

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