High mobility channels for ultimate CMOS

D. K. Sadana, S. J. Koester, Y. Sun, E. W. Kiewra, S. W. Bedell, A. Reznicek, J. A. Ott, K. Fogel, D. J. Webb, J. Fompeyrine, J. P. Locquet, M. Sousa, R. Germann

Research output: Contribution to journalConference articlepeer-review


Integration of Ge as the p-FET channel material for 22 nm and beyond technology nodes is receiving increasing attention. Furthermore, there is a growing consensus in the CMOS industry that III-Vs channels for n-FETs should be closely evaluated. This review examines choices for Ge integration with Si, and describes recent results from III-V channels with a high-k/metal gate stack. copyright The Electrochemical Society.

Original languageEnglish (US)
Pages (from-to)343-354
Number of pages12
JournalECS Transactions
Issue number2
StatePublished - Dec 1 2006
EventAdvanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: Oct 29 2006Nov 3 2006


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