Integration of Ge as the p-FET channel material for 22 nm and beyond technology nodes is receiving increasing attention. Furthermore, there is a growing consensus in the CMOS industry that III-Vs channels for n-FETs should be closely evaluated. This review examines choices for Ge integration with Si, and describes recent results from III-V channels with a high-k/metal gate stack. copyright The Electrochemical Society.
|Original language||English (US)|
|Number of pages||12|
|State||Published - Dec 1 2006|
|Event||Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting - Cancun, Mexico|
Duration: Oct 29 2006 → Nov 3 2006