High mobility channels for ultimate CMOS

D. K. Sadana; S. J. Koester; Y. Sun; E. W. Kiewra; S. W. Bedell; A. Reznicek; J. A. Ott; K. Fogel; D. J. Webb; J. Fompeyrine; J. P. Locquet; M. Sousa; R. Germann

doi:10.1149/1.2356294

High mobility channels for ultimate CMOS

D. K. Sadana, S. J. Koester, Y. Sun, E. W. Kiewra, S. W. Bedell, A. Reznicek, J. A. Ott, K. Fogel, D. J. Webb, J. Fompeyrine, J. P. Locquet, M. Sousa, R. Germann

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Integration of Ge as the p-FET channel material for 22 nm and beyond technology nodes is receiving increasing attention. Furthermore, there is a growing consensus in the CMOS industry that III-Vs channels for n-FETs should be closely evaluated. This review examines choices for Ge integration with Si, and describes recent results from III-V channels with a high-k/metal gate stack. copyright The Electrochemical Society.

Original language	English (US)
Pages (from-to)	343-354
Number of pages	12
Journal	ECS Transactions
Volume	3
Issue number	2
DOIs	https://doi.org/10.1149/1.2356294
State	Published - Dec 1 2006
Event	Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: Oct 29 2006 → Nov 3 2006

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abstract = "Integration of Ge as the p-FET channel material for 22 nm and beyond technology nodes is receiving increasing attention. Furthermore, there is a growing consensus in the CMOS industry that III-Vs channels for n-FETs should be closely evaluated. This review examines choices for Ge integration with Si, and describes recent results from III-V channels with a high-k/metal gate stack. copyright The Electrochemical Society.",

author = "Sadana, {D. K.} and Koester, {S. J.} and Y. Sun and Kiewra, {E. W.} and Bedell, {S. W.} and A. Reznicek and Ott, {J. A.} and K. Fogel and Webb, {D. J.} and J. Fompeyrine and Locquet, {J. P.} and M. Sousa and R. Germann",

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T1 - High mobility channels for ultimate CMOS

AU - Sadana, D. K.

AU - Koester, S. J.

AU - Sun, Y.

AU - Kiewra, E. W.

AU - Bedell, S. W.

AU - Reznicek, A.

AU - Ott, J. A.

AU - Fogel, K.

AU - Webb, D. J.

AU - Fompeyrine, J.

AU - Locquet, J. P.

AU - Sousa, M.

AU - Germann, R.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Integration of Ge as the p-FET channel material for 22 nm and beyond technology nodes is receiving increasing attention. Furthermore, there is a growing consensus in the CMOS industry that III-Vs channels for n-FETs should be closely evaluated. This review examines choices for Ge integration with Si, and describes recent results from III-V channels with a high-k/metal gate stack. copyright The Electrochemical Society.

AB - Integration of Ge as the p-FET channel material for 22 nm and beyond technology nodes is receiving increasing attention. Furthermore, there is a growing consensus in the CMOS industry that III-Vs channels for n-FETs should be closely evaluated. This review examines choices for Ge integration with Si, and describes recent results from III-V channels with a high-k/metal gate stack. copyright The Electrochemical Society.

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T2 - Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting

Y2 - 29 October 2006 through 3 November 2006

ER -

High mobility channels for ultimate CMOS

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