High-Mobility Carriers in Epitaxial IrO 2 Films Grown using Hybrid Molecular Beam Epitaxy

Sreejith Nair, Zhifei Yang, Kevin Storr, Bharat Jalan

Research output: Contribution to journalArticlepeer-review

Abstract

Binary rutile oxides of 5d metals such as IrO2 stand out in comparison to their 3d and 4d counterparts due to limited experimental studies, despite rich predicted quantum phenomena. Here, we investigate the electrical transport properties of IrO2 by engineering epitaxial thin films grown using hybrid molecular beam epitaxy. Our findings reveal phonon-limited carrier transport and thickness-dependent anisotropic in-plane resistance in IrO2 (110) films, the latter suggesting a complex relationship between strain relaxation and orbital hybridization. Magnetotransport measurements reveal a previously unobserved nonlinear Hall effect. A two-carrier analysis of this effect shows the presence of minority carriers with mobility exceeding 3000 cm2/(V s) at 1.8 K. These results point toward emergent properties in 5d metal oxides that can be controlled using dimensionality and epitaxial strain.

Original languageEnglish (US)
Pages (from-to)10850-10857
JournalNano letters
Volume24
Issue number35
DOIs
StatePublished - Sep 4 2024

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© 2024 American Chemical Society.

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