High-fT n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD

S. J. Koester, J. O. Chu, R. A. Groves

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

The authors present high-frequency results of n-channel MODFETs fabricated on high-mobility Si/SiGe strained layer heterostructures grown by ultrahigh vacuum chemical vapour deposition (UHV-CVD). Devices with gate length Lg = 0.2μm and drain-source separation Lds = 0.9μm displayed unity current gain cutoff frequencies as high as fT = 45GHz (47GHz) at V2 = +0.6V (+1.5V). Similar devices with Lg = 0.2μm and Lds = 0.5μm produced values of fT= 61 GHz (62GHz) at Vds = +0.6V (+1.0V). The value fT = 62GHz is the highest unity current gain cutoff frequency reported to date for an n-channel strained Si MODFET.

Original languageEnglish (US)
Pages (from-to)86-87
Number of pages2
JournalElectronics Letters
Volume35
Issue number1
DOIs
StatePublished - Jan 7 1999
Externally publishedYes

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