High frequency oscillators using cointegrated BAW thin-film piezoelectrics with microwave BJTs

S. G. Burns, R. J. Weber, S. D. Braymen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

The authors report on the design of UHF and L-band oscillators using of sputter-deposited, thin-film, aluminum nitride resonators cointegrated with microwave fT = 2.5 GHz bipolar junction transistors (BJTs). This technology uses reactive ion etching (RIE) trench-isolated 2.5-GHz BJTs cointegrated with high-Q AlN resonators synthesized with an anisotropic etch along the <111> crystal axes with the first-level Al metal serving as the etch stop. The resonator is used as the feedback element. Design techniques and suggestions for novel circuit and system architectures using this technology are presented.

Original languageEnglish (US)
Title of host publicationProceedings of the Annual Frequency Control Symposium
Editors Anon
PublisherPubl by IEEE
Pages207-211
Number of pages5
ISBN (Print)0879426586
StatePublished - Dec 1 1991
EventProceedings of the 45th Annual Symposium on Frequency Control 1991 - Los Angeles, CA, USA
Duration: May 29 1991May 31 1991

Other

OtherProceedings of the 45th Annual Symposium on Frequency Control 1991
CityLos Angeles, CA, USA
Period5/29/915/31/91

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