High frequency oscillators using cointegrated BAW thin-film piezoelectrics with microwave BJTs

S. G. Burns; R. J. Weber; S. D. Braymen

High frequency oscillators using cointegrated BAW thin-film piezoelectrics with microwave BJTs

S. G. Burns, R. J. Weber, S. D. Braymen

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

The authors report on the design of UHF and L-band oscillators using of sputter-deposited, thin-film, aluminum nitride resonators cointegrated with microwave f_T = 2.5 GHz bipolar junction transistors (BJTs). This technology uses reactive ion etching (RIE) trench-isolated 2.5-GHz BJTs cointegrated with high-Q AlN resonators synthesized with an anisotropic etch along the <111> crystal axes with the first-level Al metal serving as the etch stop. The resonator is used as the feedback element. Design techniques and suggestions for novel circuit and system architectures using this technology are presented.

Original language	English (US)
Title of host publication	Proceedings of the Annual Frequency Control Symposium
Editors	Anon
Publisher	Publ by IEEE
Pages	207-211
Number of pages	5
ISBN (Print)	0879426586
State	Published - Dec 1 1991
Event	Proceedings of the 45th Annual Symposium on Frequency Control 1991 - Los Angeles, CA, USA Duration: May 29 1991 → May 31 1991

Other

Other	Proceedings of the 45th Annual Symposium on Frequency Control 1991
City	Los Angeles, CA, USA
Period	5/29/91 → 5/31/91

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title = "High frequency oscillators using cointegrated BAW thin-film piezoelectrics with microwave BJTs",

abstract = "The authors report on the design of UHF and L-band oscillators using of sputter-deposited, thin-film, aluminum nitride resonators cointegrated with microwave fT = 2.5 GHz bipolar junction transistors (BJTs). This technology uses reactive ion etching (RIE) trench-isolated 2.5-GHz BJTs cointegrated with high-Q AlN resonators synthesized with an anisotropic etch along the <111> crystal axes with the first-level Al metal serving as the etch stop. The resonator is used as the feedback element. Design techniques and suggestions for novel circuit and system architectures using this technology are presented.",

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AU - Burns, S. G.

AU - Weber, R. J.

AU - Braymen, S. D.

PY - 1991/12/1

Y1 - 1991/12/1

N2 - The authors report on the design of UHF and L-band oscillators using of sputter-deposited, thin-film, aluminum nitride resonators cointegrated with microwave fT = 2.5 GHz bipolar junction transistors (BJTs). This technology uses reactive ion etching (RIE) trench-isolated 2.5-GHz BJTs cointegrated with high-Q AlN resonators synthesized with an anisotropic etch along the <111> crystal axes with the first-level Al metal serving as the etch stop. The resonator is used as the feedback element. Design techniques and suggestions for novel circuit and system architectures using this technology are presented.

AB - The authors report on the design of UHF and L-band oscillators using of sputter-deposited, thin-film, aluminum nitride resonators cointegrated with microwave fT = 2.5 GHz bipolar junction transistors (BJTs). This technology uses reactive ion etching (RIE) trench-isolated 2.5-GHz BJTs cointegrated with high-Q AlN resonators synthesized with an anisotropic etch along the <111> crystal axes with the first-level Al metal serving as the etch stop. The resonator is used as the feedback element. Design techniques and suggestions for novel circuit and system architectures using this technology are presented.

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M3 - Conference contribution

AN - SCOPUS:0026391833

SN - 0879426586

SP - 207

EP - 211

BT - Proceedings of the Annual Frequency Control Symposium

A2 - Anon, null

PB - Publ by IEEE

T2 - Proceedings of the 45th Annual Symposium on Frequency Control 1991

Y2 - 29 May 1991 through 31 May 1991

ER -

High frequency oscillators using cointegrated BAW thin-film piezoelectrics with microwave BJTs

Abstract

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