High-frequency noise performance of SiGe p-channel MODFETs

S. J. Koester, J. O. Chu, C. S. Webster

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

For the first time, an investigation into the microwave noise performance of SiGe-based MODFETs is presented. The devices were 0.1 μm gate-length p-channel MODFETs fabricated on a high-mobility SiGe strained-layer heterostructure grown by UHV-CVD and had a unity gain cutoff frequency fT of 42 GHz and maximum frequency of oscillation fmax of 69 GHz at a drain-to-source bias voltage Vds of -0.6 V. A minimum noise figure Fmin of 1.1 dB and an associated gain Ga of 18 dB were obtained at 3 GHz, while values of Fmin = 1.7 dB and Ga = 12 dB were obtained at 10 GHz. These values are comparable to those of SiGe production HBTs, and demonstrate the suitability of SiGe MODFETs for RF and microwave communications applications.

Original languageEnglish (US)
Pages (from-to)674-675
Number of pages2
JournalElectronics Letters
Volume36
Issue number7
DOIs
StatePublished - Mar 30 2000

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