Abstract
For the first time, an investigation into the microwave noise performance of SiGe-based MODFETs is presented. The devices were 0.1 μm gate-length p-channel MODFETs fabricated on a high-mobility SiGe strained-layer heterostructure grown by UHV-CVD and had a unity gain cutoff frequency fT of 42 GHz and maximum frequency of oscillation fmax of 69 GHz at a drain-to-source bias voltage Vds of -0.6 V. A minimum noise figure Fmin of 1.1 dB and an associated gain Ga of 18 dB were obtained at 3 GHz, while values of Fmin = 1.7 dB and Ga = 12 dB were obtained at 10 GHz. These values are comparable to those of SiGe production HBTs, and demonstrate the suitability of SiGe MODFETs for RF and microwave communications applications.
Original language | English (US) |
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Pages (from-to) | 674-675 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 36 |
Issue number | 7 |
DOIs | |
State | Published - Mar 30 2000 |