@inproceedings{d600758bb22846098cd3bc1b5cd1e0d6,
title = "High frequency methods for characterization of oxidized porous silicon",
abstract = "This paper compares insertion loss and T-resonator methods to characterize the electrical properties of oxidized porous silicon. The insertion method provided consistent dielectric and attenuation data on a range of conductive substrates, while the T-method was limited to low loss substrates. The estimated effective dielectric constant is 3.3 for a dielectric constant value of 5.6 and attenuation data at 4 and 40 GHz is 3.12 and 8.39 dB/cm, respectively, for a 26 μm thick film.",
keywords = "Attenuation, Circuit testing, Conductivity, Dielectric constant, Dielectric losses, Dielectric materials, Dielectric substrates, Fabrication, Frequency, Silicon",
author = "Peterson, \{R. L.\} and I. Itotia and Drayton, \{R. F.\}",
year = "2001",
month = jan,
day = "1",
doi = "10.1109/SMIC.2001.942367",
language = "English (US)",
series = "2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "210--214",
editor = "Ponchak, \{George E.\}",
booktitle = "2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001",
note = "3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001 ; Conference date: 14-09-2001",
}