High frequency methods for characterization of oxidized porous silicon

R. L. Peterson, I. Itotia, R. F. Drayton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

This paper compares insertion loss and T-resonator methods to characterize the electrical properties of oxidized porous silicon. The insertion method provided consistent dielectric and attenuation data on a range of conductive substrates, while the T-method was limited to low loss substrates. The estimated effective dielectric constant is 3.3 for a dielectric constant value of 5.6 and attenuation data at 4 and 40 GHz is 3.12 and 8.39 dB/cm, respectively, for a 26 μm thick film.

Original languageEnglish (US)
Title of host publication2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001
EditorsGeorge E. Ponchak
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages210-214
Number of pages5
ISBN (Electronic)0780371291, 9780780371293
DOIs
StatePublished - Jan 1 2001
Event3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001 - Ann Arbor, United States
Duration: Sep 14 2001 → …

Publication series

Name2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001

Other

Other3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001
Country/TerritoryUnited States
CityAnn Arbor
Period9/14/01 → …

Keywords

  • Attenuation
  • Circuit testing
  • Conductivity
  • Dielectric constant
  • Dielectric losses
  • Dielectric materials
  • Dielectric substrates
  • Fabrication
  • Frequency
  • Silicon

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