TY - GEN
T1 - High frequency AC electromigration lifetime measurements from a 32nm test chip
AU - Zhou, Chen
AU - Wang, Xiaofei
AU - Fung, Rita
AU - Wen, Shi Jie
AU - Wong, Rick
AU - Kim, Chris H.
PY - 2015/8/25
Y1 - 2015/8/25
N2 - A test circuit for studying Electromigration (EM) effects under realistic high frequency AC stress was implemented in a 32nm High-k Metal Gate (HKMG) process. Four different stress patterns (DC, pulsed DC, square AC and real AC) can be generated using on-chip circuits. Local heaters are used to raise the die temperature to >300°C for accelerated testing. Experiment results over 52.7 hours show no AC stress induced failures under 325°C, 1.5V (driver supply) at 200 MHz and 900 MHz. However, the pre-AC stress had an impact on the DC EM distribution.
AB - A test circuit for studying Electromigration (EM) effects under realistic high frequency AC stress was implemented in a 32nm High-k Metal Gate (HKMG) process. Four different stress patterns (DC, pulsed DC, square AC and real AC) can be generated using on-chip circuits. Local heaters are used to raise the die temperature to >300°C for accelerated testing. Experiment results over 52.7 hours show no AC stress induced failures under 325°C, 1.5V (driver supply) at 200 MHz and 900 MHz. However, the pre-AC stress had an impact on the DC EM distribution.
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U2 - 10.1109/VLSIT.2015.7223696
DO - 10.1109/VLSIT.2015.7223696
M3 - Conference contribution
AN - SCOPUS:84950983999
T3 - Digest of Technical Papers - Symposium on VLSI Technology
SP - T42-T43
BT - 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - Symposium on VLSI Technology, VLSI Technology 2015
Y2 - 16 June 2015 through 18 June 2015
ER -