High frequency AC electromigration lifetime measurements from a 32nm test chip

Chen Zhou, Xiaofei Wang, Rita Fung, Shi Jie Wen, Rick Wong, Chris H. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

A test circuit for studying Electromigration (EM) effects under realistic high frequency AC stress was implemented in a 32nm High-k Metal Gate (HKMG) process. Four different stress patterns (DC, pulsed DC, square AC and real AC) can be generated using on-chip circuits. Local heaters are used to raise the die temperature to >300°C for accelerated testing. Experiment results over 52.7 hours show no AC stress induced failures under 325°C, 1.5V (driver supply) at 200 MHz and 900 MHz. However, the pre-AC stress had an impact on the DC EM distribution.

Original languageEnglish (US)
Title of host publication2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesT42-T43
ISBN (Electronic)9784863485013
DOIs
StatePublished - Aug 25 2015
EventSymposium on VLSI Technology, VLSI Technology 2015 - Kyoto, Japan
Duration: Jun 16 2015Jun 18 2015

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2015-August
ISSN (Print)0743-1562

Other

OtherSymposium on VLSI Technology, VLSI Technology 2015
Country/TerritoryJapan
CityKyoto
Period6/16/156/18/15

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