High electron mobility and ambipolar transport in organic thin-film transistors based on a π-stacking quinoidal terthiophene

The observation of n-channel conduction in a DCMT-based organic thin-film transistor (OTFT) with a saturation electronmobility of 0.2 cm²/Vs was reported. It was shown that devices with DCMT films grown at higher temperatures can be ambipolar, i.e., they can be n-channel or p-channel depending on the sign of th gate bias. Temperature measurement son high n-channel mobility DCMT OTFTs revealed that transport was activated in the temperature range 260 to 80 K, with a small activation energy of 35±10 meV.