High electron mobility and ambipolar transport in organic thin-film transistors based on a π-stacking quinoidal terthiophene

Reid J. Chesterfield; Christopher R. Newman; Ted M. Pappenfus; Paul C. Ewbank; Michael H. Haukaas; Kent R. Mann; Larry L. Miller; C. Daniel Frisbie

doi:10.1002/adma.200305200

High electron mobility and ambipolar transport in organic thin-film transistors based on a π-stacking quinoidal terthiophene

Reid J. Chesterfield, Christopher R. Newman, Ted M. Pappenfus, Paul C. Ewbank, Michael H. Haukaas, Kent R. Mann, Larry L. Miller, C. Daniel Frisbie

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298 Scopus citations

Abstract

The observation of n-channel conduction in a DCMT-based organic thin-film transistor (OTFT) with a saturation electronmobility of 0.2 cm²/Vs was reported. It was shown that devices with DCMT films grown at higher temperatures can be ambipolar, i.e., they can be n-channel or p-channel depending on the sign of th gate bias. Temperature measurement son high n-channel mobility DCMT OTFTs revealed that transport was activated in the temperature range 260 to 80 K, with a small activation energy of 35±10 meV.

Original language	English (US)
Pages (from-to)	1278-1282
Number of pages	5
Journal	Advanced Materials
Volume	15
Issue number	15
DOIs	https://doi.org/10.1002/adma.200305200
State	Published - Aug 5 2003

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title = "High electron mobility and ambipolar transport in organic thin-film transistors based on a π-stacking quinoidal terthiophene",

abstract = "The observation of n-channel conduction in a DCMT-based organic thin-film transistor (OTFT) with a saturation electronmobility of 0.2 cm2/Vs was reported. It was shown that devices with DCMT films grown at higher temperatures can be ambipolar, i.e., they can be n-channel or p-channel depending on the sign of th gate bias. Temperature measurement son high n-channel mobility DCMT OTFTs revealed that transport was activated in the temperature range 260 to 80 K, with a small activation energy of 35±10 meV.",

author = "Chesterfield, {Reid J.} and Newman, {Christopher R.} and Pappenfus, {Ted M.} and Ewbank, {Paul C.} and Haukaas, {Michael H.} and Mann, {Kent R.} and Miller, {Larry L.} and Frisbie, {C. Daniel}",

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T1 - High electron mobility and ambipolar transport in organic thin-film transistors based on a π-stacking quinoidal terthiophene

AU - Chesterfield, Reid J.

AU - Newman, Christopher R.

AU - Pappenfus, Ted M.

AU - Ewbank, Paul C.

AU - Haukaas, Michael H.

AU - Mann, Kent R.

AU - Miller, Larry L.

AU - Frisbie, C. Daniel

PY - 2003/8/5

Y1 - 2003/8/5

N2 - The observation of n-channel conduction in a DCMT-based organic thin-film transistor (OTFT) with a saturation electronmobility of 0.2 cm2/Vs was reported. It was shown that devices with DCMT films grown at higher temperatures can be ambipolar, i.e., they can be n-channel or p-channel depending on the sign of th gate bias. Temperature measurement son high n-channel mobility DCMT OTFTs revealed that transport was activated in the temperature range 260 to 80 K, with a small activation energy of 35±10 meV.

AB - The observation of n-channel conduction in a DCMT-based organic thin-film transistor (OTFT) with a saturation electronmobility of 0.2 cm2/Vs was reported. It was shown that devices with DCMT films grown at higher temperatures can be ambipolar, i.e., they can be n-channel or p-channel depending on the sign of th gate bias. Temperature measurement son high n-channel mobility DCMT OTFTs revealed that transport was activated in the temperature range 260 to 80 K, with a small activation energy of 35±10 meV.

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JO - Advanced Materials

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High electron mobility and ambipolar transport in organic thin-film transistors based on a π-stacking quinoidal terthiophene

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