High chi block copolymer DSA to improve pattern quality for FinFET device fabrication

Hsinyu Tsai, Hiroyuki Miyazoe, Ankit Vora, Teddie Magbitang, Noel Arellano, Chi Chun Liu, Michael J. Maher, William J. Durand, Simon J. Dawes, James J. Bucchignano, Lynne Gignac, Daniel P. Sanders, Eric A. Joseph, Matthew E. Colburn, C. Grant Willson, Christopher J. Ellison, Michael A. Guillorn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

Directed self-assembly (DSA) with block-copolymers (BCP) is a promising lithography extension technique to scale below 30nm pitch with 193i lithography. Continued scaling toward 20nm pitch or below will require material system improvements from PS-b-PMMA. Pattern quality for DSA features, such as line edge roughness (LER), line width roughness (LWR), size uniformity, and placement, is key to DSA manufacturability. In this work, we demonstrate finFET devices fabricated with DSA-patterned fins and compare several BCP systems for continued pitch scaling. Organic-organic high chi BCPs at 24nm and 21nm pitches show improved low to mid-frequency LER/LWR after pattern transfer.

Original languageEnglish (US)
Title of host publicationAdvances in Patterning Materials and Processes XXXIII
EditorsTodd R. Younkin, Christoph K. Hohle
PublisherSPIE
Volume9779
ISBN (Electronic)9781510600140
DOIs
StatePublished - Jan 1 2016
EventAdvances in Patterning Materials and Processes XXXIII - San Jose, United States
Duration: Feb 22 2016Feb 25 2016

Other

OtherAdvances in Patterning Materials and Processes XXXIII
CountryUnited States
CitySan Jose
Period2/22/162/25/16

Fingerprint

Block Copolymers
Self-assembly
block copolymers
Roughness
Self assembly
Block copolymers
self assembly
Fabrication
roughness
Surface roughness
fabrication
Linewidth
Lithography
lithography
Scaling
scaling
Line
fins
Uniformity
Placement

Keywords

  • Directed self assembly
  • FinFET device
  • Grapho-epitaxy
  • High chi BCP
  • PS-PMMA
  • Pitch scaling

Cite this

Tsai, H., Miyazoe, H., Vora, A., Magbitang, T., Arellano, N., Liu, C. C., ... Guillorn, M. A. (2016). High chi block copolymer DSA to improve pattern quality for FinFET device fabrication. In T. R. Younkin, & C. K. Hohle (Eds.), Advances in Patterning Materials and Processes XXXIII (Vol. 9779). [977910] SPIE. https://doi.org/10.1117/12.2219544

High chi block copolymer DSA to improve pattern quality for FinFET device fabrication. / Tsai, Hsinyu; Miyazoe, Hiroyuki; Vora, Ankit; Magbitang, Teddie; Arellano, Noel; Liu, Chi Chun; Maher, Michael J.; Durand, William J.; Dawes, Simon J.; Bucchignano, James J.; Gignac, Lynne; Sanders, Daniel P.; Joseph, Eric A.; Colburn, Matthew E.; Willson, C. Grant; Ellison, Christopher J.; Guillorn, Michael A.

Advances in Patterning Materials and Processes XXXIII. ed. / Todd R. Younkin; Christoph K. Hohle. Vol. 9779 SPIE, 2016. 977910.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tsai, H, Miyazoe, H, Vora, A, Magbitang, T, Arellano, N, Liu, CC, Maher, MJ, Durand, WJ, Dawes, SJ, Bucchignano, JJ, Gignac, L, Sanders, DP, Joseph, EA, Colburn, ME, Willson, CG, Ellison, CJ & Guillorn, MA 2016, High chi block copolymer DSA to improve pattern quality for FinFET device fabrication. in TR Younkin & CK Hohle (eds), Advances in Patterning Materials and Processes XXXIII. vol. 9779, 977910, SPIE, Advances in Patterning Materials and Processes XXXIII, San Jose, United States, 2/22/16. https://doi.org/10.1117/12.2219544
Tsai H, Miyazoe H, Vora A, Magbitang T, Arellano N, Liu CC et al. High chi block copolymer DSA to improve pattern quality for FinFET device fabrication. In Younkin TR, Hohle CK, editors, Advances in Patterning Materials and Processes XXXIII. Vol. 9779. SPIE. 2016. 977910 https://doi.org/10.1117/12.2219544
Tsai, Hsinyu ; Miyazoe, Hiroyuki ; Vora, Ankit ; Magbitang, Teddie ; Arellano, Noel ; Liu, Chi Chun ; Maher, Michael J. ; Durand, William J. ; Dawes, Simon J. ; Bucchignano, James J. ; Gignac, Lynne ; Sanders, Daniel P. ; Joseph, Eric A. ; Colburn, Matthew E. ; Willson, C. Grant ; Ellison, Christopher J. ; Guillorn, Michael A. / High chi block copolymer DSA to improve pattern quality for FinFET device fabrication. Advances in Patterning Materials and Processes XXXIII. editor / Todd R. Younkin ; Christoph K. Hohle. Vol. 9779 SPIE, 2016.
@inproceedings{19769d1d39244d8ba6f3f5f52a9b306a,
title = "High chi block copolymer DSA to improve pattern quality for FinFET device fabrication",
abstract = "Directed self-assembly (DSA) with block-copolymers (BCP) is a promising lithography extension technique to scale below 30nm pitch with 193i lithography. Continued scaling toward 20nm pitch or below will require material system improvements from PS-b-PMMA. Pattern quality for DSA features, such as line edge roughness (LER), line width roughness (LWR), size uniformity, and placement, is key to DSA manufacturability. In this work, we demonstrate finFET devices fabricated with DSA-patterned fins and compare several BCP systems for continued pitch scaling. Organic-organic high chi BCPs at 24nm and 21nm pitches show improved low to mid-frequency LER/LWR after pattern transfer.",
keywords = "Directed self assembly, FinFET device, Grapho-epitaxy, High chi BCP, PS-PMMA, Pitch scaling",
author = "Hsinyu Tsai and Hiroyuki Miyazoe and Ankit Vora and Teddie Magbitang and Noel Arellano and Liu, {Chi Chun} and Maher, {Michael J.} and Durand, {William J.} and Dawes, {Simon J.} and Bucchignano, {James J.} and Lynne Gignac and Sanders, {Daniel P.} and Joseph, {Eric A.} and Colburn, {Matthew E.} and Willson, {C. Grant} and Ellison, {Christopher J.} and Guillorn, {Michael A.}",
year = "2016",
month = "1",
day = "1",
doi = "10.1117/12.2219544",
language = "English (US)",
volume = "9779",
editor = "Younkin, {Todd R.} and Hohle, {Christoph K.}",
booktitle = "Advances in Patterning Materials and Processes XXXIII",
publisher = "SPIE",
address = "United States",

}

TY - GEN

T1 - High chi block copolymer DSA to improve pattern quality for FinFET device fabrication

AU - Tsai, Hsinyu

AU - Miyazoe, Hiroyuki

AU - Vora, Ankit

AU - Magbitang, Teddie

AU - Arellano, Noel

AU - Liu, Chi Chun

AU - Maher, Michael J.

AU - Durand, William J.

AU - Dawes, Simon J.

AU - Bucchignano, James J.

AU - Gignac, Lynne

AU - Sanders, Daniel P.

AU - Joseph, Eric A.

AU - Colburn, Matthew E.

AU - Willson, C. Grant

AU - Ellison, Christopher J.

AU - Guillorn, Michael A.

PY - 2016/1/1

Y1 - 2016/1/1

N2 - Directed self-assembly (DSA) with block-copolymers (BCP) is a promising lithography extension technique to scale below 30nm pitch with 193i lithography. Continued scaling toward 20nm pitch or below will require material system improvements from PS-b-PMMA. Pattern quality for DSA features, such as line edge roughness (LER), line width roughness (LWR), size uniformity, and placement, is key to DSA manufacturability. In this work, we demonstrate finFET devices fabricated with DSA-patterned fins and compare several BCP systems for continued pitch scaling. Organic-organic high chi BCPs at 24nm and 21nm pitches show improved low to mid-frequency LER/LWR after pattern transfer.

AB - Directed self-assembly (DSA) with block-copolymers (BCP) is a promising lithography extension technique to scale below 30nm pitch with 193i lithography. Continued scaling toward 20nm pitch or below will require material system improvements from PS-b-PMMA. Pattern quality for DSA features, such as line edge roughness (LER), line width roughness (LWR), size uniformity, and placement, is key to DSA manufacturability. In this work, we demonstrate finFET devices fabricated with DSA-patterned fins and compare several BCP systems for continued pitch scaling. Organic-organic high chi BCPs at 24nm and 21nm pitches show improved low to mid-frequency LER/LWR after pattern transfer.

KW - Directed self assembly

KW - FinFET device

KW - Grapho-epitaxy

KW - High chi BCP

KW - PS-PMMA

KW - Pitch scaling

UR - http://www.scopus.com/inward/record.url?scp=84974602789&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84974602789&partnerID=8YFLogxK

U2 - 10.1117/12.2219544

DO - 10.1117/12.2219544

M3 - Conference contribution

AN - SCOPUS:84974602789

VL - 9779

BT - Advances in Patterning Materials and Processes XXXIII

A2 - Younkin, Todd R.

A2 - Hohle, Christoph K.

PB - SPIE

ER -