High chi block copolymer DSA to improve pattern quality for FinFET device fabrication

Hsinyu Tsai, Hiroyuki Miyazoe, Ankit Vora, Teddie Magbitang, Noel Arellano, Chi Chun Liu, Michael J. Maher, William J. Durand, Simon J. Dawes, James J. Bucchignano, Lynne Gignac, Daniel P. Sanders, Eric A. Joseph, Matthew E. Colburn, C. Grant Willson, Christopher J. Ellison, Michael A. Guillorn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

21 Scopus citations


Directed self-assembly (DSA) with block-copolymers (BCP) is a promising lithography extension technique to scale below 30nm pitch with 193i lithography. Continued scaling toward 20nm pitch or below will require material system improvements from PS-b-PMMA. Pattern quality for DSA features, such as line edge roughness (LER), line width roughness (LWR), size uniformity, and placement, is key to DSA manufacturability. In this work, we demonstrate finFET devices fabricated with DSA-patterned fins and compare several BCP systems for continued pitch scaling. Organic-organic high chi BCPs at 24nm and 21nm pitches show improved low to mid-frequency LER/LWR after pattern transfer.

Original languageEnglish (US)
Title of host publicationAdvances in Patterning Materials and Processes XXXIII
EditorsTodd R. Younkin, Christoph K. Hohle
ISBN (Electronic)9781510600140
StatePublished - Jan 1 2016
EventAdvances in Patterning Materials and Processes XXXIII - San Jose, United States
Duration: Feb 22 2016Feb 25 2016

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


OtherAdvances in Patterning Materials and Processes XXXIII
Country/TerritoryUnited States
CitySan Jose


  • Directed self assembly
  • FinFET device
  • Grapho-epitaxy
  • High chi BCP
  • Pitch scaling


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