High chi block copolymer DSA to improve pattern quality for FinFET device fabrication

Hsinyu Tsai, Hiroyuki Miyazoe, Ankit Vora, Teddie Magbitang, Noel Arellano, Chi Chun Liu, Michael J. Maher, William J. Durand, Simon J. Dawes, James J. Bucchignano, Lynne Gignac, Daniel P. Sanders, Eric A. Joseph, Matthew E. Colburn, C. Grant Willson, Christopher J. Ellison, Michael A. Guillorn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

17 Scopus citations

Abstract

Directed self-assembly (DSA) with block-copolymers (BCP) is a promising lithography extension technique to scale below 30nm pitch with 193i lithography. Continued scaling toward 20nm pitch or below will require material system improvements from PS-b-PMMA. Pattern quality for DSA features, such as line edge roughness (LER), line width roughness (LWR), size uniformity, and placement, is key to DSA manufacturability. In this work, we demonstrate finFET devices fabricated with DSA-patterned fins and compare several BCP systems for continued pitch scaling. Organic-organic high chi BCPs at 24nm and 21nm pitches show improved low to mid-frequency LER/LWR after pattern transfer.

Original languageEnglish (US)
Title of host publicationAdvances in Patterning Materials and Processes XXXIII
EditorsTodd R. Younkin, Christoph K. Hohle
PublisherSPIE
ISBN (Electronic)9781510600140
DOIs
StatePublished - Jan 1 2016
EventAdvances in Patterning Materials and Processes XXXIII - San Jose, United States
Duration: Feb 22 2016Feb 25 2016

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9779
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherAdvances in Patterning Materials and Processes XXXIII
CountryUnited States
CitySan Jose
Period2/22/162/25/16

Keywords

  • Directed self assembly
  • FinFET device
  • Grapho-epitaxy
  • High chi BCP
  • PS-PMMA
  • Pitch scaling

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