High-χ, Si-containing block copolymers and process strategies for directing their self-assembly

Christopher J. Ellison, C. Grant Willson, Dustin Janes, Gregory Blachut, Yasunobu Soymeya, Paulina A.Rincon Delgadillo, Geert Vandenberghe, Arjun Singh, Jan Doise, Natsuko Ito, Ryuta Mizuochi, Yusuke Asano, Austin P. Lane

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Si-containing block copolymer line and space patterns with 19.8 nm periodicity have been fabricated using lithographically defined guiding patterns. All processes were performed using leading edge production level nanofabrication tools on the 300 mm wafer scale. Under the conditions described here, top-down micrographs without dislocation defects can be readily obtained using automated inspection recipes and relatively low magnification. Future work will be directed toward continued resolution improvements, characterizing the through-film morphology, and demonstrating pattern transfer.

Original languageEnglish (US)
Pages (from-to)187-190
Number of pages4
JournalJournal of Photopolymer Science and Technology
Issue number2
StatePublished - 2017

Bibliographical note

Publisher Copyright:
© 2017, Tokai University. All rights reserved.


  • Block Copolymers
  • Directed Self-assembly
  • Etching
  • Lithography


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