HfO2-based insulating stacks on 4H-SiC(0001)

V. V. Afanas'ev; A. Stesmans; F. Chen; S. A. Campbell; R. Smith

doi:10.1063/1.1538310

HfO₂-based insulating stacks on 4H-SiC(0001)

V. V. Afanas'ev, A. Stesmans, F. Chen, S. A. Campbell, R. Smith

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

87 Scopus citations

Abstract

The deposition of HfO₂-based insulating stacks on 4H-SiC(0001) was demonstrated. The stack combined the high dielectric permittivity of HfO₂ with the high quality of the ultrathin SiO₂/SiC interface and associated high energy barriers for electron and hole injection from SiC. The high dielectric permittivity of HfO₂ allowed the application of high electric fields to the Sic surface, while keeping the strength of the field in the insulator at a moderate level.

Original language	English (US)
Pages (from-to)	922-924
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	6
DOIs	https://doi.org/10.1063/1.1538310
State	Published - Feb 10 2003

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abstract = "The deposition of HfO2-based insulating stacks on 4H-SiC(0001) was demonstrated. The stack combined the high dielectric permittivity of HfO2 with the high quality of the ultrathin SiO2/SiC interface and associated high energy barriers for electron and hole injection from SiC. The high dielectric permittivity of HfO2 allowed the application of high electric fields to the Sic surface, while keeping the strength of the field in the insulator at a moderate level.",

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AU - Afanas'ev, V. V.

AU - Stesmans, A.

AU - Chen, F.

AU - Campbell, S. A.

AU - Smith, R.

PY - 2003/2/10

Y1 - 2003/2/10

N2 - The deposition of HfO2-based insulating stacks on 4H-SiC(0001) was demonstrated. The stack combined the high dielectric permittivity of HfO2 with the high quality of the ultrathin SiO2/SiC interface and associated high energy barriers for electron and hole injection from SiC. The high dielectric permittivity of HfO2 allowed the application of high electric fields to the Sic surface, while keeping the strength of the field in the insulator at a moderate level.

AB - The deposition of HfO2-based insulating stacks on 4H-SiC(0001) was demonstrated. The stack combined the high dielectric permittivity of HfO2 with the high quality of the ultrathin SiO2/SiC interface and associated high energy barriers for electron and hole injection from SiC. The high dielectric permittivity of HfO2 allowed the application of high electric fields to the Sic surface, while keeping the strength of the field in the insulator at a moderate level.

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JF - Applied Physics Letters

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ER -

HfO₂-based insulating stacks on 4H-SiC(0001)

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