Abstract
The heterostructure field effect transistors with a doping dipole layer obtained by planar p+ + and n+ + layers in charge control layer are proposed and fabricated in AlGaAs/GaAs. The dipole creates a large barrier between the channel and the gate, and this leads to a reduction of the forward biased gate current, a broad transconductance peak, a high maximum drain current, and no negative transconductance in enhancement-mode n-channel devices.
Original language | English (US) |
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Pages (from-to) | 964-965 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 26 |
Issue number | 14 |
DOIs | |
State | Published - Sep 1 1990 |
Keywords
- Field effect transistors
- Semiconductor devices and materials