Heterostructure Field Effect Transistor with Doping Dipole in Charge Control Layer

J. Zou, A. Gopinath, T. Akinwande, M. S. Shur

Research output: Contribution to journalArticlepeer-review

Abstract

The heterostructure field effect transistors with a doping dipole layer obtained by planar p+ + and n+ + layers in charge control layer are proposed and fabricated in AlGaAs/GaAs. The dipole creates a large barrier between the channel and the gate, and this leads to a reduction of the forward biased gate current, a broad transconductance peak, a high maximum drain current, and no negative transconductance in enhancement-mode n-channel devices.

Original languageEnglish (US)
Pages (from-to)964-965
Number of pages2
JournalElectronics Letters
Volume26
Issue number14
DOIs
StatePublished - Sep 1 1990

Keywords

  • Field effect transistors
  • Semiconductor devices and materials

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