Heterostructure FET Model Including Gate Leakage

P. Paul Ruden

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

A new, analytical model for heterostructure field effect transistors is presented. The model is in the framework of the gradual channel approximation and includes the effects of gate leakage, velocity saturation, and subthreshold conduction. The consideration of gate leakage makes this model particularly useful for application to enhancement-mode devices.

Original languageEnglish (US)
Pages (from-to)2267-2270
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume37
Issue number10
DOIs
StatePublished - Oct 1990

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