Heterostructure FET Model Including Gate Leakage

P. Paul Ruden

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


A new, analytical model for heterostructure field effect transistors is presented. The model is in the framework of the gradual channel approximation and includes the effects of gate leakage, velocity saturation, and subthreshold conduction. The consideration of gate leakage makes this model particularly useful for application to enhancement-mode devices.

Original languageEnglish (US)
Pages (from-to)2267-2270
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number10
StatePublished - Oct 1990

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